GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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GaN substrates
Sumitomo Electric Industries, Ltd.
Gallium Nitride (GaN) substrates are widely used for optical devices in the blue-violate to green ranges due to their excellent material characteristics. In recent years, GaN substrates have been drawing attention for power devices. Many development projects are underway.
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GaN Power Amplifiers > 5W
Macom Technology Solutions Holdings Inc.
MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense, Industrial, Scientific and Medical applications and 5G wireless infrastructure. MACOM GaN products deliver output power levels ranging from 2 W to over 7 kW and exhibit best in class RF performance with respect to gain and efficiency. For sensitive Aerospace & Defense applications MACOM can offer a US only supply chain with AS9100D Certification.
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GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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Wideband GaN Amplifiers
The Teledyne RF & Microwave family of GaN-based amplifiers maximizes power density and efficiency, and establishes a new benchmark for small size in the 0.1 to 6.0 GHz range that operates over multi octave. With dimensions of 2.5"L x 2"W x 0.42"H at only 2.1 cubic inches, these modular, non-ITAR GaN amplifiers maintain the rugged design characteristics needed for harsh airborne and land based requirements.
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Wafer Thickness Measuring System
WT-425
Contact type can measure any materials within 0.2 µm (2 σ at 20℃ ±1℃). The wafer floats positions while measurement points change and it does not damage even thin wafers. Best for the process control of compound wafers and oxide wafers. (SiC, GaN, LT, Sapphire and Bonded Wafers)
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Rad Hard GaN FETs
Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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Semiconductor Curve Tracer
CS-8000 Series
The CS-8000 series are equipped with a high-voltage source of up to 5 kV and a high-current source of 2 kA. It features Pulse output, Gate pattern, and very small current measurement capabilities, and it supports the design evaluation of wideband-gap semiconductors such as SiC and GaN.
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High Voltage Optically Isolated Probe, 1 GHz Bandwidth. Includes soft-carrying case.
DL10-ISO
The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Solid State GaN (Gallium Nitride) Amplifiers
Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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Broadband High Power Amplifiers
Chengdu KeyLink Microwave Technology Co., Ltd.
KeyLink's broadband high power amplifiers are available for operating frequencies from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 2 watts to over 500 watts. Based on state-of-the-art GaN, GaAs, LDMOS power devices and MMICs, KeyLink designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness.
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Power Management Controller
Macom Technology Solutions Holdings Inc.
Hghly integrated Power Management Integrated Circuit for GaN Power Amplifier
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SSPAs / LNAs / Broadband
SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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T/R（Transceiver Module）
Chengdu KeyLink Microwave Technology Co., Ltd.
RF Amplifiers up to 500MHz LDMOS and GaN are applied for this frequency range of Narrow and Broad band including VHF, UHF bands amplifier modules and offers low risk on heat radiation and long term sustainable operation. Also, controlling and protection circuits are designed.
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GaN 100W Power Amplifiers
PE15A5033F
The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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RF Amplifiers up to 2500 MHz
L and S Band 1,2,4, and 8 Kilowatt rack mount solid state microwave amplifiers ideal for CW and pulse TWT amplifier replacement utilizing GaN technology and rivals the TWT amplifier in size and weight. Also available is our broad line of high power modules including 25, 50, and 100 watt pallets for integrating into your own power amplifier design.
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High Throughput Test Platform for Multi-Site & Index Parallel Applications
ETS-88
The ETS-88 is an optimal test platform for testing a wide variety of devices including: simple analog, high precision, high voltage, high current / power, automotive, video, audio, complex mixed-signal, as well as emerging power processes like SiC and GaN.
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Space Power Solutions
Teledyne e2v HiRel Electronics (HiRel) offers leading edge power solutions dedicated for high-reliability applications. The introduction of Galium Nitride (GaN) technology solutions enable high power density designs with four times less space requirements than traditional MOSFETs. The Teledyne HiRel Point-of-Load (POL) products combine multiple load capabilities, outstanding radiation performance with high levels of integration and easy to use features.
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Radio Frequency (RF) And Microwave Products
Enable your 5G, aerospace, defense, test and measurement or industrial RF wireless applications with our portfolio of RF and microwave devices. These include high reliability RF diodes, Gallium Nitride (GaN) and Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) amplifiers, frequency translation and power transistor devices, switches, attenuators, varactors, filters and more.
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RF Devices that deliver Comprehensive Solutions for Wireless Systems
Sumitomo Electric Industries, Ltd.
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
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Standard GaN Amplifiers
A GaN (Gallium Nitride) amplifier is a power amplifier that uses GaN, a wide-bandgap semiconductor material, to provide high power density, efficiency, and frequency capabilities.
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Microscope Photoluminescence Spectrometer
Flex One
Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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RF Amplifiers up to 6000 MHz
Includes RF and microwave amplifiers covering the band from 500Mhz to 6000Mhz in a single module with either GaN or GaAs devices. Custom and standard power amplifiers available with high linearity, low noise figure, and very low error vector magnitude (EVM). Our rack systems and select modules include Automatic Gain Control (AGC), Automatic Level Control (ALC), and peak/pulse/average detection useful in OTA, MIMO, and CTIA testing.
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Low Temperature Gas Source
Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.
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MPI Sorter Series
MPI’s Sorter Series are improving production efficiency and yields for market sectors related to LED chip, package production, discrete device handling, and IC substrate manufacturing. Deploying MPI’s Pick & Place technology, the Sorter Line offers dedicated sorting and defect inspection solutions particularly suited for GaN, GaAs, Vertical LED Chip, Flip Chip, and Laser Diode applications. With a proven heritage of and market-advanced technologies, MPI offers competitive and differentiated solutions that are scalable and cost-effective.
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Osram High Power Blue Violet Laser Diodes (450-488nm)
The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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2 GHz to 6 GHz, 45 dBm Power Amplifier
HMC7885
The HMC7885 is a 32 W gallium nitride (GaN), monolithic microwave integrated circuit (MMIC) power amplifier (PA) module that operates between 2 GHz and 6 GHz, and is provided in an 18-lead hermetically sealed module. The amplifier typically provides 21 dB of small signal gain and 45 dBm of saturated radio frequency (RF) output power. The amplifier draws 2200 mA of quiescent current (IDD) from a 28 V dc supply. The RF input and output are dc blocked and matched to 50 Ω for ease of use.
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DL-HCM Series High-Temperature Solder-In Tip
DL-HCM-HiTemp
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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DL-ISO 40 Vpp MMCX Tip
DL-ISO-40V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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IsoVu Isolated Probes
The IsoVu Measurement Systems can make nearly impossible measurements – like high-side Vgs- a reality, providing today’s power engineer with measurement insights not available in other power systems and instruments. When performing near-impossible measurements, especially in those involving Gallium Nitride (GaN) and Silicon Carbide (SiC), it can be extremely time consuming and cumbersome. IsoVu eliminates those concerns: IsoVu probes offer better common mode rejection and higher bandwidth for high EMI environments and on power FETs like SiC and GaN.
