GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Product
Semiconductor Curve Tracer
CS-8000 Series
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The CS-8000 series are equipped with a high-voltage source of up to 5 kV and a high-current source of 2 kA. It features Pulse output, Gate pattern, and very small current measurement capabilities, and it supports the design evaluation of wideband-gap semiconductors such as SiC and GaN.
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Product
LED/IGBT Driver
SiC/GaN
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Mornsun Guangzhou Science & Technology
MORNSUN offers high quality IGBT driver, LED driver and driver power module for IGBT driver and SiC/GaN gate driver, which feature a compact design, are energy-efficient and robust with high quality at an affordable price. Especially MORNSUN LED driver is a step-down constant current source for driving high-power LED providing high efficiency, wide input voltage range, high temperature working capacity and complete functions. All of these driver power modules are applicable for multiple commercial and industrial applications.
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Product
Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
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Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Product
Dynamic Test Systems
H3TRB | HTGB (HTGS) | RTGB (RTGS)
Test System
Durability and reliability of wide-bandgap materials such as SiC and GaN are an important topic. The focus here is on new failure mechanisms whose effects are not visible with traditional H(3)TRB/HTGS – but which nevertheless have an influence on the real application.
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Product
2 GHz to 6 GHz, 45 dBm Power Amplifier
HMC7885
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The HMC7885 is a 32 W gallium nitride (GaN), monolithic microwave integrated circuit (MMIC) power amplifier (PA) module that operates between 2 GHz and 6 GHz, and is provided in an 18-lead hermetically sealed module. The amplifier typically provides 21 dB of small signal gain and 45 dBm of saturated radio frequency (RF) output power. The amplifier draws 2200 mA of quiescent current (IDD) from a 28 V dc supply. The RF input and output are dc blocked and matched to 50 Ω for ease of use.
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Product
Solid State GaN (Gallium Nitride) Amplifiers
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Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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Product
IsoVu Isolated Probes
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The IsoVu Measurement Systems can make nearly impossible measurements – like high-side Vgs- a reality, providing today’s power engineer with measurement insights not available in other power systems and instruments. When performing near-impossible measurements, especially in those involving Gallium Nitride (GaN) and Silicon Carbide (SiC), it can be extremely time consuming and cumbersome. IsoVu eliminates those concerns: IsoVu probes offer better common mode rejection and higher bandwidth for high EMI environments and on power FETs like SiC and GaN.
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Product
Programmer
Gang2000
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The GANG2000 Programmer is a multi-tap device that can quickly and efficiently program multiple independent target boards that use the Texas Instruments C2000 32-bit Microcontrollers from a Windows PC over a high-speed USB2.0 port. You can also use the Gang2000 during program development as a JTAG emulator.
