Memory Device
directly accessible computer's internal or main memory.
See Also: Memory, Memory Test, DDR, NAND, DRAM, RAM, ROM, Memory Testers, DUT
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Product
Memory Test Software
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Teradyne’s customers count on us for our Near Device Under Test (DUT) technology that gives memory device manufacturers a guaranteed performance advantage. A brief description of dynamic memory and storage memory devices will highlight why device manufacturers depend on Teradyne’s memory test solutions.
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Product
Parallel Memory Test Solution
Magnum2
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Teradyne’s Magnum 2 test system delivers high throughput and high parallel test efficiency for high performance non-volatile memories, static RAM memories and logic devices.
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
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DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
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Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
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Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
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DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
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Product
PLD ISP Feature, GTE 10.00p
K8220B
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The PLD ISP feature allows the test developer engineer to specify a configuration bitstream file in VCL digital test file, much like programming a Flash memory device. The PLD ISP feature supports multiple PLD configuration data formats are supported including. Serial Vector Format (SVF), Standard Test And Programming Language (STAPL), Jam, Jam Byte Code (JBC) object files.
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Product
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V16GN56-SBH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U16GE32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32GB DDR4-3200 2GbX8 1.2V Samsung Chip
AQD-D4U32GN32-SB
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32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
USRP-2955, 10 MHz to 6 GHz, 80 MHz Bandwidth, GPS-Disciplined OCXO, Reconfigurable USRP Software Defined Radio Device
785264-01
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The USRP-2955 provides an integrated hardware and software solution for rapidly prototyping high-performance wireless receiver systems. It is designed for over-the-air signal acquisition and analysis. It features a two-stage superheterodyne architecture with four independent receiver channels and shares local oscillators for phase-coherent operation. It also offers a Kintex-7 FPGA programmable with the LabVIEW FPGA Module. With these features, the USRP-2955 has the RF and processing performance for applications such as spectrum monitoring, direction finding, signals intelligence, wideband recording, and radar prototyping. The USRP-2955 is equipped with a GPS-disciplined 10 MHz oven-controlled crystal oscillator (OCXO) Reference Clock, which improves frequency accuracy and synchronization.
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Product
USRP Software Defined Radio Device
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The USRP Software Defined Radio Device is a reconfigurable RF device that includes a combination of host-based processors, FPGAs, and RF front ends. The USRP Software Defined Radio Device include options that range from lower cost options with fixed FPGA personalities to high-end radios with a large, open FPGAs and wide instantaneous bandwidth. These devices can be used for applications such as multiple input, multiple output (MIMO) and LTE/WiFi testbeds, SIGINT, and radar systems.
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Product
16GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GN56-SB
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
16GB ECC DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GE56-SB
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SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
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SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
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8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
Wafer Prober
Prexa MS
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The latest fully automated 300mm wafer prober for memory devices. Featuring high rigidity and exceptional thermal control, the system enables full-wafer contact testing.
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Product
USRP-2920, 20 MHz Bandwidth, 50 MHz to 2.2 GHz USRP Software Defined Radio Device
781906-01
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20 MHz Bandwidth, 50 MHz to 2.2 GHz USRP Software Defined Radio Device - The USRP‑2920 is a tunable RF transceiver with a high-speed analog‑to‑digital converter and digital‑to‑analog converter for streaming baseband I and Q signals to a host PC over 1 Gigabit Ethernet. You can also use the USRP‑2920 for the following applications: white space; broadcast FM; public safety; land-mobile, low-power unlicensed devices on industrial, scientific, and medical (ISM) bands; sensor networks; cell phone; amateur radio; or GPS.
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4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
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8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
USRP‑2930, 20 MHz Bandwidth, 50 MHz to 2.2 GHz, Included GPS-Disciplined OCXO, USRP Software Defined Radio Device
781910-01
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20 MHz Bandwidth, 50 MHz to 2.2 GHz, Included GPS-Disciplined OCXO, USRP Software Defined Radio Device - The USRP‑2930 is a tunable RF transceiver with a high-speed analog‑to‑digital converter and digital‑to‑analog converter for streaming baseband I and Q signals to a host PC over 1 Gigabit Ethernet. It also features a GPS-disciplined oscillator (GPSDO) with PPS accuracy of ±50 ns. You also can use the NI USRP‑2930 for the following communications applications: white space; broadcast FM; public safety; land-mobile, low-power unlicensed devices on industrial, scientific, and medical (ISM) bands; sensor networks; cell phone; amateur radio; or GPS.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
Industrial Memory DDR2 Memory
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SQRAM DDR2 memory modules deliver 667/800 MT/s frequency with longevity support for legacy markets.
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Product
SODIMM DDR4 3200MT/s
SQR-SD4S
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Original Hynix IC chips adopted, Data transfer rate: 3200MT/s. Capacity: 4/8/16/32GB, Operating temperature: 0 °C ~ 85 °C Lifetime warranty.
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Product
Memory Tester
RAMCHECK LX DDR3
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Quickly test DDR3 DIMM and SO-DIMM memory. In just seconds, RAMCHECK LX will perform a thorough test of the module and provide complete identification. Also tests expensive LRDIMM modules.
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Product
Industrial Memory
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Advantech SQRAM Industrial Memory solutions offer an extensive portfolio of industrial grade DRAM solutions, such as UDIMM, SODIMM, ECC-DIMM, RDIMM, and LRDIMM designed according to the JEDEC standards and cover all technologies including DDR, DDR2, DDR3, DDR4 in wide temp ranges (-40 to 85°C).
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Product
Industrial Flash & Memory Solutions DDR4 Memory
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SQRAM DDR4 memory modules perform at superior speeds of up to 3200 MT/s, a 20% reduction in power consumption, and higher capacity than DDR3.
