Showing results: 31 - 45 of 92 items found.
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Qorvo
Qorvo's portfolio of amplifiers that operate over 6 GHz includes both GaAs and GaN devices, available in die and package forms.
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Mercury Systems, Inc.
Our family of solid-state power amplifiers (SSPAs) utilizes proprietary technology and a proven building block approach that enables rapid customization to specific requirements. The world-class design team understands the tradeoffs between GaAs versus GaN and FET versus MMIC to quickly achieve the right design for the right problem. Whether you need a connectorized compact GaN SSPA or an integrated SSPA assembly, we have the technical know-how to deliver on-time and on-budget.
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Teledyne LeCroy
The 60 V Common Mode Differential Probes are the ideal probes for lower voltage GaN power conversion measurement with the highest accuracy, best CMRR, and lowest noise.
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Sumitomo Electric Industries, Ltd.
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
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Tektronix, Inc.
The IsoVu Measurement Systems can make nearly impossible measurements – like high-side Vgs- a reality, providing today’s power engineer with measurement insights not available in other power systems and instruments. When performing near-impossible measurements, especially in those involving Gallium Nitride (GaN) and Silicon Carbide (SiC), it can be extremely time consuming and cumbersome. IsoVu eliminates those concerns: IsoVu probes offer better common mode rejection and higher bandwidth for high EMI environments and on power FETs like SiC and GaN.
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Exodus Advanced Communications
Exodus Chip & Wire Hybrid ultra broadband amplifiers feature GaN, GaAsFET discrete die on ceramic substrate covering frequency ranges from 4GHz to 26.5GHz and power levels exceeding 500W.
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Exodus Advanced Communications
Exodus Pulse SSPA products feature LDMOS and GaN discrete and Chip & Wire technologies covering frequency ranges from 1MHz to 12GHz at power levels exceeding 1KW for Modules and 10KW for Systems.
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Camtek Intelligent Imaging
Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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KLA-Tencor Corp
Candela® defect inspection systems detect and classify a wide range of critical defects on compound semiconductor substrates (GaN, GaAs, InP, sapphire, SiC, etc.) and hard disk drives, with high sensitivity at production throughputs.
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Nanowave Technologies Inc.
SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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Exodus Advanced Communications
Exodus Narrowband CW and Linearized SSPA products feature LDMOS, GaN,GaAsFET discrete and Chip & Wire Hybrid technologies covering frequency ranges from 1MHz to 26.5GHz at power levels exceeding 1KW for Modules and 10KW for Systems
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Exodus Advanced Communications
Exodus Broadband SSPA products feature LDMOS, GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from 1MHz to 24.5GHz at power levels exceeding 500W for Modules and 3KW for Systems.
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AMP4065LC-2 -
Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Chengdu KeyLink Microwave Technology Co., Ltd.
RF Amplifiers up to 500MHz LDMOS and GaN are applied for this frequency range of Narrow and Broad band including VHF, UHF bands amplifier modules and offers low risk on heat radiation and long term sustainable operation. Also, controlling and protection circuits are designed.
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Teledyne RF & Microwave
We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.