Silicon
atomic number 14 tetravalent metalloid chemical element.
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Silicon Irradiance Sensors
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Measure the irradiance intensity on your photovoltaics system precisely at an affordable price with IMT Technology’s robust silicon solar irradiance sensors (Si sensors).
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Pyranometer with Silicon Photodiode
LP471SILICONPYRA
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Pyranometer with silicon photodiade for GLOBAL SOLAR IRRADIANCE measurement.
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Silicon Heavy-doped Pen Tester
HS-MPRT
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Heavy doped testing, especially good for purchase the material.■ Not only sound alarm, but also Led light alarm , to guarantee sorting work accurately.■ adaptable for sorting little granular material, little broken IC Wafer and other little silicon material.■ Can set alarm ranges from 0.0 to 1.0Ω﹡㎝.
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Silicon Inspection System
NIR-01
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The NIR-01 imaging system is made of CNC engineered Aluminium alloy. The suruface protection is powder painting and electrolitic oxidation on pure aluminium surfaces. The frame of the system is a high quality industrial design. All components are designed for long term heavy usage with minimal maintenance needs. Electrical components are also selected for stability and durability. The block like electronics gives the advantage of easy and quick repair.
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Silicon SPDT Switch Reflective, 100 MHz to 44 GHz
ADRF5024
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The ADRF5024 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process. This switch operates from 100 MHz to 44 GHz with better than 1.7 dB of insertion loss and 35 dB of isolation. The ADRF5024 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.
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Ka-Band Silicon SATCOM Tx Quad Core IC
AWMF-0109
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The AWMF-0109 is a highly integrated silicon quad core chip intended for satellite communications transmit applications. The device supports four dual polarization radiating elements with full programmable polarization flexibility. The device provides 22 dB of gain per channel with an output power of +12 dBm per element per polarization. Additional features include gain compensation over temperature, temperature reporting, and Tx output power telemetry. The chip features ESD protection on all pins, operates from a +1.8 V supply, and is packaged in a 48 lead 6x6 mm QFN for easy installation in planar phased array antennas.
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X-Band Silicon Radar Quad Core IC
AWS-0101
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The AWS-0101 is a highly integrated silicon quad core IC intended for radar and 5G phased array applications. The device supports four radiating elements, single beam transmit, and dual beam receive and includes all requisite beam steering controls for 6 bit phase and gain control. The device provides 21 dB gain during transmit mode, +15 dBm output power during transmit, and 3.4 dB NF during receive. Additional features include gain compensation over temperature, temperature reporting, and fast beam switching using eight on-chip beam weight storage registers. The device features ESD protection on all pins, operates from a +1.8V supply, and is packaged in a 56 lead 7x7 QFN for easy installation in planar phased array antennas.
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Silicon & Compound Wafers
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Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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20μm Silicon-Based Interdigitated Electrode (IDE)
IES1
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20 μm silicon-based interdigitated electrode (IDE) designed for MEMS sensors, biosensing, photoelectric detection, and electrochemical research. Precision microfabrication on a silicon substrate ensures excellent performance, with customizable electrode materials, dimensions, and layouts available for laboratory and OEM applications.
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Silicon O/C Content Tester
HS-OCT-6700
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The HS-OCT-6700 system used to measure the O&C in silicon ingot and wafers. The system is the highest performance FT-IR systems available. While the spectrometer has the power to handle the most advanced research-level experiments, routine analyses are performed just as conveniently. Every facet of the Nicolet FT-IR spectrometer has been engineered to facilitate sample handling, introduce options to scientists, and increase laboratory throughput.
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Endevco Miniature Piezoresistive Silicon Pressure Sensors
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Accurate and Reliable Performance at Extreme Pressures.
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3μm Silicon Interdigitated Electrode (IDE)
EAP1
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Silicon IDE chip with a 3μm gap for MEMS, biosensing, gas sensing, and electrochemical applications.
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Life-time Measurement System For Silicon Bulks/ingots By JIS Method
HF-100DCA
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*Global standard model for the lifetime test of silicon bulk*JIS direct current anodizing method*Data processing by digital oscilloscope and PC with software
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Silicon Detectors
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Through the photovoltaic effect, detectors provide a means of transforming light energy to an electrical current. The root of the theory behind this phenomenon is a small energy gap between the valence and conduction bands of the detector. When light, with enough energy to excite an electron from the valence to the conduction band, is incident upon the detector, the resulting accumulation of charge leads to a flow of current in an external circuit. Since light is not the only source of energy that can excite an electron, detectors will have some amount of current that is not representative of incident light. For example, fluctuations in thermal energy can easily be mistaken for light intensity changes. A variety of these "non-light" contributions are present and, when summed up, make up the total noise within the detector.
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Life-time Measurement System For Silicon Bulks / Ingots With Non-contact
HF-90R
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*Silicon bulk, Prismatic shape (JIS code), Ingot condition*Non-contact photoconduction vibration decay method*Data processing by digital oscilloscope and PC with software
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Fully Automatic 4 Point Probe System for Silicon Wafer
WS-8800
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*Measurement of resistivity, thickness, conductivity(P/N) and temperature*Tester self-test function, wide measuring range*Thickness, measurement position and temperature correction function for silicon resistivity*Number of cassette station can be changed by customers request*Host (CIM) communication and SMIF or FOUP compatible
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Silicon Nails Feature Development And Runtime, GTE 10.00p
K8228B
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The Silicon Nails test development tool also allows users to define the vectors that they would like to execute on the non-compliant boundary scan device. The test development tool will generate the boundary scan test to output or input at the relevant interconnecting pin, thus generating the test consistently.
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Silicon Carbide Diodes
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In addition to ensuring compliance with today's most stringent energy efficiency regulations (Energy Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon diodes. Silicon-carbide diodes belong to our STPOWER family.
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Detectors & Sensors
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Excelitas offers Photonic Detection Solutions ranging from Silicon and InGaAS PINs and Avalanche Photodiodes, Hybrid Receivers, and Photon Counting Modules to address high-performance, high-volume applications across a wide range of markets. Excelitas Thermal IR Sensors represent a broad range of Pyroelectric Detectors, Thermopile Detectors and IR Sensor Modules used for motion detection, presence monitoring, temperature measurement and gas detection.
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Vacuum Oil-Purifiers
AEHV
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The most important application of the high-vacuum degasser is in the field of high-voltage transmission and in the manufacture of electrical devices. In addition, the high vacuum process is used in the degassing of oil cables including poly-butanes. Outside the electrical industry, this process is used for the dehydration and degassing of oil for radar and electronic equipment, oil-sealed vacuum pumps, brake fluids, cooling oils - including phosphate esters and silicones. Amperis offers the AEHV Oil Degasser designed for maximum job efficiency, expertly proven performance, requires minimal maintenance and is fully serviced. All this is thanks to the full support of Amperis' specialist technicians, plus the "know-how" and thorough research that makes the AEHV a Unique Degasser. Designed for unattended operation and suitable for operation on energized equipment - full equipment monitoring is an option.
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Radar Core Chips
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Macom Technology Solutions Holdings Inc.
Multifunction GaAs and Silicon MCM designed for communication radar and weather applications. MACOM Core Chips deliver a complete transmit/receive function with phase and amplitude control.
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Non-Contact Mapping Life Time System
MWR-2S-3
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The device is designed for express non-destructive contactless local measurement of non-equilibrium charge carrier effective lifetime in silicon substrates, epi-wafers and solar cells at different stages of manufacturing cycle. It can be used for incoming and outcoming inspection of silicon ingots and wafers, tuning and periodic inspection of semiconductor and solar cell technology quality. Lifetime determination is based on measuring photoconductivity decay after pulselight photo-exciting with usage of reflected microwave as a probe.
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Embedded Systems
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Active Silicon designs and manufactures custom embedded systems, often integrating our leading-edge image acquisition technology. Typically, units are designed for a specific OEM application often in the field of medical devices, industrial automation or remote monitoring. Systems are designed to meet various safety, quality and medical standards as appropriate, as well as being designed for long product life retaining the same fit, form and function for many years.
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Test Leads
AL-34WB
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Standard Electric Works Co., Ltd
● Wire length: 1.2m approx. Silicone insulated wire (1000mm) with wire connected to straight input plugs (130mm PVC wire), and wire for clamp (100mm PVC wire). ● Outside diameter of silicone insulated wire: 5mm Outside diameter of PVC wire: 3.5mm● Input plug color: Red•Green•Black•Blue ● Current rating: 5A● Voltage rating: 300V● Designed for Milliohm meter, Micro-ohm meter, Low resistance measurement with high current injection. ● Conductor size: 40mm maximum● Safety standard: IEC/EN 61010-031 CAT IV 300V
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PIN Diodes
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PIN photodiodes convert light to current – without a bias voltage having to be applied. Silicon is commonly used as an inexpensive detector material in the Vis range. For higher demands, InGaAs is used; it covers the widest spectral range from the Vis to the NIR. We offer silicon carbide as a “solar-blind” detector specifically for the UV range.
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Semiconductor Functional Verification Tools
Trek5
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Breker’s solutions enable test reuse across simulation, emulation, prototyping and actual silicon, eliminating redundant effort across the development flow. The Breker “Trek” suite solves challenges across the functional verification process for large, complex semiconductors.
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Power Meters
Rk-5700
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The Rk-5700 Series Power Meters accept a wide variety of probes – pyroelectric, silicon, and thermopile – enabling them to perform absolute radiometry, total laser power (cw and average), and irradiance measurements from the UV to far-IR, pW to kW. Integrated lock-in amplifier circuitry allows for synchronous detection of chopped optical signals, improving both S/N ratio and background rejection. The dual channel Rk-5720 simultaneously measures Channel A, Channel B, and the ratio B/A. An IEEE-488 GPIB computer interface, Analog Outputs, Background Cancel, and Autorange are all standard features.
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Microscopic Melting Point Meter
DRK8030
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Shandong Drick Instruments Co., Ltd.
Heat transfer material is a silicone oil, in full compliance with USP standard measurement method can simultaneously measure three samples, direct observation of the melting process can be measured colored samples.
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Light-to-Analog Sensors (Current)
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Renesas' light-to-current silicon optical sensors combine a photodiode array and current amplifiers on a single monolithic IC. These devices are ideal for display and keypad dimming, as well as industrial and medical light sensing applications.
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Silicon Diodes
DT-670 Series
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DT-670 Series silicon diodes offer better accuracy over a wider temperature range than any previously marketed silicon diodes. Conforming to the Curve DT-670 standard voltage versus temperature response curve, sensors within the DT-670 series are interchangeable and, for many applications, do not require individual calibration. DT-670 sensors in the SD package are available in four tolerance bands—three for general cryogenic use across the 1.4 K to 500 K temperature range and one that offers superior accuracy for applications from 30 K to room temperature. DT-670 sensors also come in a seventh tolerance band, B and E, which are available only as bare die. For applications requiring greater accuracy, DT-670-SD diodes are available with calibration across the full 1.4 K to 500 K temperature range.
