High Density Plasma Etching System for 200mm substrates

Model DRIE-1200-LL-ICP - TEK-VAC INDUSTRIES Inc. (TEK-VAC INDUSTRIES Inc.)

Single process chamber for high rate plasma etching of 200mm wafers. Loadlocked. Stainless steel construction. Capabilities of smaller, multiple wafer throughput.
Substrate materials include (but are not limited to) silicon, silicon oxynitrides, SiC, SiGe, Aluminum, and III-V compounds including GaAs, GaN, GaP, and InP.
Stable plasma generation capabilities to below 1 mTorr.
Five, Six, or Eight gas mass flow controllers are standard. Expanded or reduced numbers are available upon request.