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Product
Memory Test System
T5230
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T5230 memory test system for NAND/NVM devices adopts a combined array architecture to achieve best-in-class cost-of-test performance for wafer test, including wafer-level burn-in (WLBI) and built-in self-test (BIST). The system can perform on-wafer test of 1,024 memory devices per test head in parallel, delivering high productivity and enabling floor space savings of up to 86%. Multiple test cells are connected per system controller in the T5230, allowing independent wafer test of each test cell. The test cells can be stored in a general multi-wafer prober while minimizing the test cell floor space, and the tester can be docked with probers in both linear and multi-stack configurations. For functional tests at a maximum test rate of 125MHz/250Mbps, the T5230 assures high timing accuracy, repeatability, and failure detection capability.
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Product
Memory Test Systems
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ICs that record and retain data are called memory devices. Our memory test systems are optimized for volume production of memory semiconductors, a market where low-mix high-volume production is the norm, and feature industry-best parallelism (the ability to test a large number of semiconductors at the same time).
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Product
Parallel Memory Test Solution
Magnum2
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Teradyne’s Magnum 2 test system delivers high throughput and high parallel test efficiency for high performance non-volatile memories, static RAM memories and logic devices.
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Product
DDR4 Pro Memory Test Adapter
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This memory test adapter for the RAMCHECK LX includes an extraordinarily rugged test socket for many thousands of insertion/removal cycles.
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Product
Memory Test System
T5835
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The new T5835 has full testing functionality, from package testing to high-speed wafer testing, for any memory ICs with operating speeds up to 5.4 Gbps, including all next-generation memories from NAND flash devices to DDR-DRAM and LPDDR-DRAM. It can handle 768 devices simultaneously for final package-level testing. It additionally features functions such as an enhanced programmable power supply (PPS) for advanced mobile memories, and a real-time DQS vs. DQ function to improve yield.
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Product
Memory Test System
T5801
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Capable of Testing Ultra-High-Speed DRAM Devices, Supporting Next-Generation GDDR7, LPDDR6, and DDR6 Technologies
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Product
Memory Test System
T5851/T5851ES
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The T5851 system is designed to provide a cost-effective test solution for evaluating high-speed protocol NAND flash memories including UFS3.0 universal flash storage and PCIe Gen 4 NVMe solid-state drives (SSD), both of which are expected to be in high demand for the LTE 5G communications market.
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Product
High Throughput 1 ns Pulsed IV Memory Test Solution
NX5730A
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Precise and fast characterization of new memory, such as spin transfer torque magneto resistive random access memory (STT-MRAM) from DC to high-speed pulsed IV measurement on silicon wafers Apply accurate and high-speed pulsed voltages (down to 1 ns pulse) to magnetic tunnel junction (MTJ) for STT-MRAM and precisely measure the resistance of MTJ Perform all typical MTJ characterization tests in one solution10 to 100 times faster cycle test, such as a bit error rate test (BERT)Capture and visualize MTJ switching waveforms clearly during the writing pulse Dedicated solution with Keysight Technologies’ technical expertise
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Product
Memory Test Systems
T5503HS2
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Semiconductor memories are in high demand to meet the needs of fast-growing end markets such as portable electronics and servers. It has been forecasted that applications ranging from mobile devices and data centers to automobiles, gaming systems and graphics cards will consume an estimated 120 billion gigabits of DRAM capacity. To meet this market demand, new generations of memories with data-transfer speeds of 6.4 Gbps and higher are being developed. Advantest’s second-generation T5503HS2 tester is designed to handle these ultra-high-speed memory ICs.
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Product
Memory Test System
T5830/T5830ES
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Highly flexible tester which has all of the capabilities needed to perform wafer sorting and final testing of price-sensitive flash memories
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Product
Ultra-high Performance Solution for Memory Device Test
Magnum EPIC
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Teradyne’s Magnum EPIC is a high-performance test solution for latest generation DRAM devices. These devices are key enablers for technologies like 5G, AI, cloud computing, autonomous vehicles, AR/VR and applications with high definition graphics.
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Product
High-Speed Memory Test Solution
UltraFLEX-M
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The UltraFLEX-M builds on the advanced test technology and architecture of the proven UltraFLEX test system to ensure high test quality at the lowest cost of test for high-speed memory devices.
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Product
Memory Test System
T5833/T5833ES
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T5833 system is a cost-efficient, high-volume test solution capable of performing both wafer sort and final test of DRAM and NAND flash memory devices. Amid surging sales of mobile electronics, DRAMs, NAND flash memories and multi-chip packages (MCPs) — the main device types used in smart phones and tablets — are quickly evolving toward higher speeds and greater device capacity. Internet and cloud servers also are driving demand for faster, higher-capacity ICs. Yet the cost of testing today's wide array of memory devices is an obstacle for chipmakers, which urgently require solutions that can deliver high functionality, high performance and low cost of test (COT). Advantest's new, multifunctional T5833 memory test system meets these needs, delivering both wafer sort and final test capabilities for a full range of memory devices, including LPDDR3-DRAMs, high-speed NAND flash memories and next-generation non-volatile memory ICs.
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Product
Memory Test System
T5221
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The T5521 is a memory test system that supports wafer test and wafer burn-in test of non-volatile memory devices such as NAND flash, housed within a multi-wafer prober to reduce test floor footprint.
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Product
Memory Test System
T5511
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Offering Multi-functionality and Industry's Top Test Speed of 8Gbps.
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Product
Memory Test Software
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Teradyne’s customers count on us for our Near Device Under Test (DUT) technology that gives memory device manufacturers a guaranteed performance advantage. A brief description of dynamic memory and storage memory devices will highlight why device manufacturers depend on Teradyne’s memory test solutions.
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Product
Programmable Multi-Way Variable-Frequency AC/DC/IR Hipot Tester
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AllWin Instrument Science and Technology Co., Ltd.
20 memory,8 test procedureOver-zero start,Over-zero cut offfrequency range from 40.0 to 400.0Hz
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
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DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
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DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
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Product
Silicon Test & Yield Analysis Solutions
Tessent®
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The Tessent product suite combines features of deterministic scan testing, embedded pattern compression, built-in self-test, specialized embedded memory test and repair, and boundary scan, as well as board and system-level test technologies. This comprehensive silicon test and yield analysis solution is built on the foundation of the best-in-class solutions for each test discipline
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Product
Memory Burn-In Test
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The N3500 is Neosem Technology’s fourth generation memory test system. Specifically designed for Flash Components and Flash Cards, the N3500 tester-on-a-board architecture targets the broadest range of DUT technologies in various form factors and packages. Each Tester Board (or “Blade”) contains 288 I/O pins and 32 DPS supplies.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
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8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
16GB ECC DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GE56-SB
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SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GE56-SB
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SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
Wireless Test Standards Software
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Generate and analyze signals for cellular and connectivity standards with NI PXI RF instrumentationPerform advanced automated test with the easy-to-use NI-RFmx software APISave on all NI RF wireless test software under a single license
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
