High Throughput 1 ns Pulsed IV Memory Test Solution

NX5730A - Keysight Technologies

Precise and fast characterization of new memory, such as spin transfer torque magneto resistive random access memory (STT-MRAM) from DC to high-speed pulsed IV measurement on silicon wafers Apply accurate and high-speed pulsed voltages (down to 1 ns pulse) to magnetic tunnel junction (MTJ) for STT-MRAM and precisely measure the resistance of MTJ Perform all typical MTJ characterization tests in one solution10 to 100 times faster cycle test, such as a bit error rate test (BERT)Capture and visualize MTJ switching waveforms clearly during the writing pulse Dedicated solution with Keysight Technologies’ technical expertise