Flash Memory
retains data absent of power. Also known as: Flash Device
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Product
RA Family Of Arm-based MCUs
RA4
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The RA4 Series bridges the needs for reasonable low power with the demand for connectivity and performance. These MCUs deliver up to 48MHz of CPU performance using an ArmⓇ CortexⓇ-M4 core with up to 256kB of embedded flash memory. The series offers a wide set of peripherals, including USB, CAN, ADC, capacitive touch, a segment LCD controller, and additional security IP integration, making it suitable for industrial equipment, home appliances, office equipment, healthcare products, and meters.
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Product
High Level Language Debugger and Emulator Tool
Universal Debug Engine
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Programmierbare Logik & Systeme GmbH
With Universal Debug Engine (UDE®) PLS offers on top solutions for software development of systems-on-silicon including debug support for the 16 Bit and 32 Bit microcontrollers C16x, C166™, ST10F276, ST10F280, XC166, XC2000, XE166, XMC4500, C166S V2, SDA6000, TriCore™ from Infineon and STMicroelectronics, Power Architecture® MPC55xx, MPC560x, MPC563x, MPC57xx from NXP™, PowerPC PPC440SPe from AMCC, Power Architecture® SPC560, SPC563, SP574 from STMicroelectronics, ARM7™, ARM9™, ARM11™, Cortex™-M0, Cortex™-M0+, Cortex™-M3, Cortex™-M4, Cortex™-M7, Cortex™-R4, Cortex™-A8, Cortex™-A9, XScale™, SuperH™ SH-2A derivatives in a new multicore debug environment as well as technical support. The extensive feature list includes functions like: high speed and flexible target access via JTAG, cJTAG with OCDS L1, EmbeddedICE, OnCE, COP, DAP, DAP2, SWD support, OCDS L2 trace, MCDS trace, CoreSight™ trace, ETM trace, ETB trace, Nexus trace, ASC, SSC, 3Pin and CAN, in-system FLASH memory programming of FLASH / OTP with UDE MemTool, support of various RTOS, OSEK® and test automation tools.
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Product
Memory Test System
T5833/T5833ES
Test System
T5833 system is a cost-efficient, high-volume test solution capable of performing both wafer sort and final test of DRAM and NAND flash memory devices. Amid surging sales of mobile electronics, DRAMs, NAND flash memories and multi-chip packages (MCPs) — the main device types used in smart phones and tablets — are quickly evolving toward higher speeds and greater device capacity. Internet and cloud servers also are driving demand for faster, higher-capacity ICs. Yet the cost of testing today's wide array of memory devices is an obstacle for chipmakers, which urgently require solutions that can deliver high functionality, high performance and low cost of test (COT). Advantest's new, multifunctional T5833 memory test system meets these needs, delivering both wafer sort and final test capabilities for a full range of memory devices, including LPDDR3-DRAMs, high-speed NAND flash memories and next-generation non-volatile memory ICs.
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Product
JTAG Boundary-Scan Controller for PXI and PXI-Express 'Hybrid' Slots or Plug-In Controller for PXI-Express Peripheral Slot
JT 37x7/PXI
Controller
High speed and performance JTAG Boundary-scan controller for PXI and PXI-Express ‘hybrid’ slots or plug-in controller for PXI-Express peripheral slot.The controllers are targeted at demanding manufacturing test applications, fast in-system flash memory programming and programmable logic configuration. The JT 37×7 is available in different operating levels (memory options) to suit your specific environment and application. Each unit is supplied with a four TAP port signal conditioning module the JT 2147 ‘QuadPOD‘
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Product
Digital Power Recorder
MPR-601W-01
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MULTI MEASURING INSTRUMENTS Co., Ltd.
*Applicable for single phase 2wires and single phase 3wires and *3phase 3wires and 3phase 4wires system*Wide measuring range up to 0～500V/500A*Easy data logging by USB flash memory
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
MICROBLAZE Processor Board
MS 1536
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- Virtex 4 FPGA with Embedded PowerPC 405 (PPC405) Core- Up to 450 MHz operation- Tri-mode Ethernet Media Access Controller- A/D Converter Blocks (10-bit / 200 kilo samples per second)- Select IO Technology (Wide selections of I/O standards from 1.5V to 3.3V)- DDR2 SDRAM (256MByte)- Program Storage Flash Memory (8MByte)- Data Storage Flash Memory (8MByte)- Vertex-4 FPGA PROM (4MByte)
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Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB ECC DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GE56-SB
Memory Module
SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
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Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
Memory Module
DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
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Product
16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32GB DDR4-3200 2GbX8 1.2V Samsung Chip
AQD-D4U32GN32-SB
Memory Module
32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
Memory Module
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
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Product
Rugged SODIMM DDR4 2666/3200 Wide Temperature
SQR-YD4I
Dual In-Line Memory Module (DIMM)
Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s, Capacity: up to 32GB. Wide Temperature supported: -40°C ~ 85 °C, Original IC chip (Samsung/Hynix).
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Product
16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
Memory Module
Registered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
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Product
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V16GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
M.2 PCIe3 NVMe RunCore Consumer SSD “Sprinter Series”
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RunCore Innovation Technology Co. Ltd.
M.2 PCIe3 NVMe Solid State Drive (SSD) is a high capacity solid-state flash memory product that complies with the PCIe Gen 3 standard and is functionally compatible with a PCIe protocol.
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Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
Memory Module
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GE56-SB
Memory Module
SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
SODIMM DDR4 3200MT/s
SQR-SD4S
Dual In-Line Memory Module (DIMM)
Original Hynix IC chips adopted, Data transfer rate: 3200MT/s. Capacity: 4/8/16/32GB, Operating temperature: 0 °C ~ 85 °C Lifetime warranty.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
Memory Module
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
Memory Module
8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
Wide Temperature Server DIMM
SQR-RD4M
Dual In-Line Memory Module (DIMM)
Original Hynix IC chip adopted, Wide operating temperature support -25~85oC, Data transfer rate up to 3200 MT/s.
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Product
Flash Meters
SF 100
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Flash meters for measurement of illuminance time response of rapid changing light sources (flashes, rotating beacons).
