Remote Plasma Sources For Process Applications

MKS remote plasma sources deliver high density reactive radicals improving on-wafer cleaning and deposition throughput. Solutions consist of a fully integrated, self-contained unit designed for quick on-chamber installation providing fast, reliable plasma ignition of O2, Hydrogen and Nitrogen gases in a customer configurable package. All solutions are equipped with intelligent power control and EtherCAT® diagnostics supporting Industry 4.0.

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Remote Plasma Sources

MKS Instruments

Semiconductor and Electronic Thin Film applications use plasma sources to generate low-energy ions and radicals to react with material surfaces and chamber walls to remove contaminants and act as a precursor to aid in material deposition. MKS provides multiple options for radical generation including Toroidal and Microwave based Remote Plasma Sources supporting Fluorine, NF3, oxygen, nitrogen and hydrogen process chemistries.

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Paragon® 8.0 Slm NF3 Flow Intelligent Remote Plasma Source

MKS Instruments

For cleaning CVD and ALD/ALE process chambers, the Paragon remote plasma source is designed for high gas dissociation rates (> 98%) of NF3 with gas flows up to 8 slm and pressures up to 10 Torr. This leading-edge performance translates into increased process throughput and repeatable process results. The Paragon design incorporates a proprietary plasma block design with a Plasma Electrolytic Oxidation coating for low particle, long block life that delivers lower cost of ownership.

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R*evolution® Remote Plasma Source

MKS Instruments

The innovative R*evolution® Remote Plasma Source combines field-proven, low-field toroidal plasma technology with an actively cooled plasma chamber made of high purity quartz, significantly reducing oxygen, hydrogen and nitrogen atomic gas loss through wall recombination. Self-contained and compact, R*evolution delivers up to 10 slm of oxygen radicals from a 6kW power supply with true power accuracy of <1% resulting in a high density, extremely clean radical source for photoresist strip and an optimal clean rate greater than 12 microns/min-1. R*evolution can be used for other surface preparation applications.

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High Power Microwave Plasma System

MKS Instruments

The High Power Microwave Plasma System features the High Power Microwave Plasma Source, generator (with isolator) and auto-tuning system comprised of the Precision Power Detector and SmartMatch® unit. This comprehensive system delivers a high concentration of radicals with low electron temperatures for the highest dissociation and lowest recombination rates.

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High Power Microwave Plasma Source

MKS Instruments

The High Power Microwave Plasma Source can be combined with a 6kW microwave generator for a high concentration of radicals providing a high productivity manufacturing solution. The High Power Microwave Plasma source is capable of igniting in multiple process gases, over a wide operating range with performance benefits in current and emerging applications such as, high throughput photoresist removal, advanced surface cleaning and conditioning, as well as, advanced deposition applications at the atomic level.

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Chemical Downstream Plasma Source

MKS Instruments

The AX7610 is a microwave plasma source for remote plasma applications. With replaceable quartz or sapphire plasma tubes, the AX7610 downstream source offers configuration flexibility to meet the most demanding application process parameters. The quartz tube version is ideally suited for production of atomic oxygen, nitrogen or argon. The sapphire tube version is compatible with much more severe CF4 CHF3 and NF3 chemistries.

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Microwave Plasma Subsystems

AX2600 And AX2700 - MKS Instruments

The AX2600 and AX2700 Microwave Plasma Delivery Subsystems are complete and highly reliable solutions for the cost-effective generation and safe delivery of atomic species to the wafer. Available in 3 kW, these highly reliable, field-proven plasma delivery subsystems deliver highly concentrated atomic species. Suitable for multiple chemistries, the high speed and precision of this plasma system’s automatic tuning guarantees immediate ignition and fast transition from plasma conditions for high productivity. Robust closed-loop control ensures high accuracy, precision, and optimal repeatability of the process from wafer to wafer and system to system.

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Remote Plasma Sources For Process Applications

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Remote Plasma Sources

Paragon® 8.0 Slm NF3 Flow Intelligent Remote Plasma Source

R*evolution® Remote Plasma Source

High Power Microwave Plasma System

High Power Microwave Plasma Source

Chemical Downstream Plasma Source

Microwave Plasma Subsystems