DRAM SO-DIMM DDR4 Memory
Improve performance up to 50% (compared to SO-DDR3.) with Advantech! We offer industrial grade SO-DDR4 2666/2400/2133 memory with 30μ" gold plating connector (260 pin) featuring 1.2v low operating voltage with faster burst accesses.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
32GB SO-DDR4-3200 2GbX8 1.2V Samsung Chip
AQD-SD4U32GN32-SB
Memory Module
32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
32GB SO-DDR4-3200 2GbX8 1.2V ECC Samsung Chip
AQD-SD4U32GE32-SB
Memory Module
32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
Memory Module
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C
AQD-SD4U8GN32-SEW
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C
AQD-SD4U16N32-SEW
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C
AQD-SD4U32N32-SBW
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C
AQD-SD4U8GN32-SEW1
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, wide temperatures from -40° to 85°C.
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Product
16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C
AQD-SD4U16N32-SEW1
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
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Product
32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C
AQD-SD4U32N32-SBW1
Memory Module
DDR4 3200Mhz Unbuffered SO-DIMM, 30μ" gold plating thickness, Anti-sulfuration resistor. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
8G SO-DDR4-3200 1GX8 1.2V SAM -20~85℃
AQD-SD4U8GN32-SE2
Memory Module
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger, Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16G SO-DDR4-3200 1GX8 1.2V SAM -20~85℃
AQD-SD4U16GN32-SE1
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger, Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
32G SO-DDR4-3200 2GX8 1.2V SAM -20~85℃
AQD-SD4U32GN32-SB2
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger, Anti-sulfuration, Semi Wide-temp Support -20~85℃.
