8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C

8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C

DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, wide temperatures from -40° to 85°C.

Specifications

Product TypeMemory Module
No other specifications are available.
Get Help