DRAM Memory Module DDR3 Memory
Deliver stable memory technology with Advantech! We offers DDR3 1866/1600/1333 memory with 30μ" gold plating connector (240 pin) featuring 1.35v/1.5v low operating voltage and better bandwidth. With rigorous reliability, vibration tests, and 0 ~ 95℃ (32 ~ 203℉) wide operating temperature range, our certified DIMM is suitable for edge computing, enterprise, embedded, automotive, data centers, and networking applications.
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Product
4G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip
AQD-D3L4GE16-SG
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DDR3-1600 ECC, 240-Pin, Samsung Chip.
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Product
4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip
AQD-D3L4GN16-SG1
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DDR3 1600Mhz Unbuffered DIMM, 30μ" gold plating thickness, 1.35V power consumption, Samsung original chip.
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Product
8G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip
AQD-D3L8GE16-SG
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DDR3-1600 ECC, 240-Pin, 512MX8, Samsung Chip.
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Product
8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip
AQD-D3L8GN16-SG1
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DDR3 1600Mhz Unbuffered DIMM, 30μ" gold plating thickness, 1.35V power consumption, Samsung original chip.
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Product
8G DDR3-1600 512X8 1.35V&1.5V SAM -20~85℃
AQD-D3L8GN16-SGH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger, Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
4G SO-DDR3-1600 512X8 1.35V SAM -40~85C
AQD-SD3L4GN16-SGW
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30u" Gold Plating Thickness, Anti-sulfurization resistance, Samsung original chip, Wide Temp. -40C to +85C, 100% tested for stability, compatibility and performance.
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Product
4G DDR3-1600 512X8 1.35V&1.5V SAM -20~85℃
AQD-D3L4GN16-SGH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger, Anti-sulfuration, Semi Wide-temp Support -20~85℃.
