4G SO-DDR3-1600 512X8 1.35V SAM -40~85C

4G SO-DDR3-1600 512X8 1.35V SAM -40~85C

30u" Gold Plating Thickness, Anti-sulfurization resistance, Samsung original chip, Wide Temp. -40C to +85C, 100% tested for stability, compatibility and performance.

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