Langer EMV-Technik GmbH
Langer EMV-Technik GmbH is a medium-sized electro-technical company which is active in the field of electromagnetic compatibility-related
- +1 888 687 5 687
+49 (0) 351 430093-0 - +49 (0) 351 430093-22
- mail@langer-emv.de
- sales@langer-emv.de
- Nöthnitzer Hang 31
Bannewitz, D-01728
Germany
-
Product
Immunity
ESD coupling
-
is used for conducted coupling of Langer ESD pulses (200ps rise time) into ICs.
-
Product
Micro probes 1 MHz up to 1 GHz
MFA 02 set
-
The two in the set included micro probes are used to measure low-frequency magnetic fields up to 1 GHz, e.g. at signal conductors (150µm), SMD componets (0603-0201) or IC pins. The MFA micro probes are guided by hand. An amplifier stage is integrated into the probe head. The amplifier stage (9V, 100mA) is powered via the BT 706 Bias tee. It has an impedance of 50 Ohm. The micro probes are connected via the Bias tee to a spectrum analyzer or an oscilloscope. The MFA 02 set delivery of Langer EMV-Technik GmbH includes correction lines. With the help of the correction lines the probe output voltage is converted either into the respective magnetic field or to the current which is running through the conductor.
-
Product
Immunity
RF coupling
-
is used for the conducted measurement of the immunity according to IEC 62132-4.
-
Product
Line-impedance stabilisation network
NNB 21 set
-
The NNB 21 line impedance stabilization network is designed for measuring of grid bound interferences of a device under test according to the satndard CISPR 25/ISO 7637. It measures the RF interference, which couples into the vehicle electrical system. Measurements during the development in a frequency range from 100 kHz to 1GHz can be carried out.
-
Product
Near Field Probes 30 MHz up to 3 GHz
RF1 set
-
The RF1 near field probe set consists of 4 passive near field probes for making measurements in the development phase of E-field and magnetic field in the ranges of 30 MHz to 3 GHz on electronic assemblies. The probe heads of the RF1 set allow for measurements close to the electronic assemblies, e.g. on single IC pins, conducting paths, components and their connectors in order to localize interference sources. Field orientation and field distribution on an electronic assembly can be detected through a trained special use of the near field probe. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
-
Product
Near Field Probes 30 MHz up to 6 GHz
XF1 set
-
The XF1 set of near field probes consists of 4 passive near field probes and one passive E field probe for making measurements in the development phase of the magnetic and electric fields in ranges from 30 MHz to 6 GHz. Due to their integrated impendance matching, the probes are less sensitive in the lower frequency range than the RF type probes. The probe heads of the XF1 set allow for the step by step identification of interference sources of the magnetic field on an electronic assembly. At first, for example the XF-R 400-1 detects the fields which the assembly emits in total. Next, using higher resolution probes the interference sources can be more precisely detected. The E field probe is used for the detection of electric interfering fields near the assemblies. With trained use of the near field probes, field orientation and field distribution can be detected. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They have an internal terminating resistance.
-
Product
Near Field Probes 30 MHz up to 3 GHz
RF2 set
-
The RF2 near field probe set consists of 4 passive near field probes for measurements in the development phase of the magnetic field in the range from 30 MHz to 3 GHz on electronic assemblies. The probe heads of the RF2 set allow the step by step localization of interference sources of the RF magnetic field on assemblies. From greater distances the electromagnetic interference can be detected by RF-R 400-1 and RF-R 50-1 probes. The RF-B 3-2 and RF-U 5-2 probes with their higher resolution can more precisely detect the interference sources. Field orientation and field distribution on an electronic assembly can be detected through a trained special use of the near field probe. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.








