Veeco Instruments Inc
Provides metrology and process equipment systems for industry leaders in the semiconductor, data storage, telecom/wireless and scientific/research markets.
- (516) 677-0200
- 1 Terminal Drive
Plainview, NY 11803
United States of America
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Medium-Temperature
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Medium-temperature processing systems deliver more thermal energy than low-temp tools can provide, without crossing into the stress-inducing range of high-temp processes. Operating between 200–600°C, they create the perfect balance for enabling critical film transformations, crystallization and adhesion. Medium-temperature MBE sources can be used for virtually any application—from hot-lip SUMO sources to standard filament for thermal effusion.
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ALD Applications
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Atomic Layer Deposition (ALD) has the potential to optimize product design across a wide array of applications from making silicon chips run faster, to increasing the efficiency of solar panels, to improving the safety of medical implants.
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ALD Periodic Table
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The ALD Periodic Table is a visual guide to the elemental building blocks of atomic layer deposition. Organized by both chemistry and purpose, it helps engineers quickly find materials that meet their priorities, whether that’s conductivity, durability, clarity or thermal stability.
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Ion Sources
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Veeco offers the most comprehensive array of ion beam sources for a broad range of applications, including the industry's only Linear gridded sources.
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ALD For Research & Development
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Veeco’s atomic layer deposition research systems are designed by ALD scientists and built for maximum experimental flexibility and value. With universal precursor delivery systems, you can use solid, liquid or gas chemistries in any precursor port. There are many options to choose from including ozone generators, in-situ monitoring and various configurations. As always, our team of ALD scientists are ready to answer your recipe development and film characterization questions. Over 2500 published academic papers feature research performed on our Savannah® thermal ALD system and Fiji® plasma ALD system.
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ALD Materials
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Chemists have synthesized many exciting new precursors for ALD and have created a large number of atomic layer deposition materials, such as coatings with improved properties for metals, semiconductors, insulators, oxides, nitrides, dielectrics, magnetic, and refractive coatings.
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Gas and Vapor Delivery Systems
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In thin film deposition, high-quality results start with how process gases are delivered, as they help create the stable environment needed for consistency by controlling flow, pressure and composition to support processes like ALD, CVD, and PVD. Advanced semiconductor devices developed for the most advanced computing processes, such as AI and edge computing, need the ultra-high-purity environments of our gas and vapor deposition delivery systems.
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Low Temperature Gas Source
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Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.
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ALD Knowledge Center
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As one of the first companies to market with a flexible commercially available atomic layer deposition system (ALD), we have a tremendous ALD Knowledge Center for researchers to draw upon. We have gathered together a wide range of information about ALD applications and thin films technology. This includes images and explanations of the exciting uses for ALD. We also gather and provide access to theses on the subject and a searchable database of scientific abstracts.
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Retractable Sources
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Veeco’s retractable sources address fundamental limitations of MBE, including source capacity, source removal for maintenance and system uptime. The retractable source allows an individual source to be withdrawn and isolated from the growth environment with the source gate valve and then removed without venting the entire chamber.
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ALD Research
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Veeco’s ALD Research page is a hub for the latest thinking in atomic layer deposition. It brings together experimental data, modeling insights and collaborative breakthroughs that help engineers stay ahead of the curve. Whether exploring new chemistries or solving complex process challenges, this resource is designed to inform, inspire and accelerate thin-film innovation.
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Low Temperature MBE
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Low-temperature processing systems make it possible to handle advanced, delicate materials without subjecting them to high heat. By maintaining gentle thermal conditions, they unlock new possibilities for working with polymers, flexible films and other materials that can’t tolerate the extreme temperatures of conventional processing.
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Dicing And Lapping Systems
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In semiconductor fabrication, clean die separation and smooth surfaces can make all the difference. While these steps might come late in the process, they play a major role in how well a device ultimately performs. Dicing and lapping bring the necessary level of precision to cut wafers into individual dies and polish surfaces so everything fits, functions and holds up the way it should in real world scenarios.
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EpiStride SiC CVD System
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Veeco’s latest technology for the compound semiconductor market enables high-performance chemical vapor deposition of Silicon Carbide for both 6 and 8-inch wafer production. The platform enables a return to production in under 5 hours after routine cleaning maintenance. The EpiStride system’s high uptimes, short cycle times and overall stable performance lead to the lowest cost of ownership per wafer compared to competitive systems.
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5cc Dual Dopant Source
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Attain precise and stable control of relatively low fluxes for dopant constituents in molecular beam epitaxy (MBE) through this compact dopant source. Its small thermal mass gives it excellent responsiveness, reproducibility, and stabilization for advanced doping profiles, plus consistent flux uniformity across an entire platen. Efficient cell heating minimizes thermal load.
