Veeco Instruments Inc
Provides metrology and process equipment systems for industry leaders in the semiconductor, data storage, telecom/wireless and scientific/research markets.
- (516) 677-0200
- 1 Terminal Drive
Plainview, NY 11803
United States of America
Categories
-
product
ALD Materials
Chemists have synthesized many exciting new precursors for ALD and have created a large number of atomic layer deposition materials, such as coatings with improved properties for metals, semiconductors, insulators, oxides, nitrides, dielectrics, magnetic, and refractive coatings.
-
product
Deposition Systems
When a thin film requires the most stringent structural or compositional properties consistently across every layer, Veeco’s Ion Beam Deposition (IBD) technology is often the answer. Using a focused beam of ions to sputter material from a target, this physical vapor deposition technique builds dense, uniform films with standout adhesion and stability.
-
product
ALD Periodic Table
The ALD Periodic Table is a visual guide to the elemental building blocks of atomic layer deposition. Organized by both chemistry and purpose, it helps engineers quickly find materials that meet their priorities, whether that’s conductivity, durability, clarity or thermal stability.
-
product
High Temperature
When low vapor pressure materials demand more heat to transform, Veeco’s high-temperature MBE sources step in. Built for thermal extremes, they power the kinds of reactions and structural changes that unlock next-level device performance.
-
product
ALD Advantages
Atomic Layer Deposition (ALD) stands out for one reason: control. The most significant advantages of thin film deposition via Atomic Later Deposition over other methods, are manifest in four distinct areas – film conformality, low temperature processing, stoichiometric control, and inherent film quality associated with the self-limiting, and self-assembled nature of the ALD mechanism ALD is exceptionally effective at coating surfaces that exhibit ultra high aspect ratio topographies, as well as surfaces requiring multilayer films with good quality interfaces technology. This thin-film process builds materials one atomic layer at a time, delivering unmatched uniformity and sub-nanometer precision, even on complex 3D structures. That level of accuracy makes ALD a critical technology for advanced semiconductor manufacturing, flexible electronics, and materials research.
-
product
ALD Research
Veeco’s ALD Research page is a hub for the latest thinking in atomic layer deposition. It brings together experimental data, modeling insights and collaborative breakthroughs that help engineers stay ahead of the curve. Whether exploring new chemistries or solving complex process challenges, this resource is designed to inform, inspire and accelerate thin-film innovation.
-
product
Retractable Sources
Veeco’s retractable sources address fundamental limitations of MBE, including source capacity, source removal for maintenance and system uptime. The retractable source allows an individual source to be withdrawn and isolated from the growth environment with the source gate valve and then removed without venting the entire chamber. The source can then be easily refilled with the same material or a new material before being remounted at standard positions to the growth module, allowing growths to continue with minimal interruption. This saves the user from re-qualifying new source to substrate distances and multiple weeks of downtime by avoiding the process of an entire system vent and bake. In addition, the differential pumping option provides a marked improvement in base pressure around the source to reduce contamination of the source material and provide longer lifetimes for sources in corrosive and oxidizing environments. Veeco’s retractable source is the leading solution for material flexibility, system productivity and enhances our leadership with the patented SUMO source technology.
-
product
Dual Filament Source
Get the optimal thermal profile for different materials and situations with the Veeco Dual Filament Source. This source is designed for growing high-quality Ga- and In-containing materials, while preventing charge material recondensation and significantly reducing defects. Dual Filament Sources are available for use with both SUMO and conventional crucibles (including Group III production crucibles).
-
product
MBE Sources
Veeco offers MBE sources, including single- and dual-filament designs, tailored for numerous elements that require low, medium, or high temperatures.
-
product
MBE Technologies
When you’re creating thin films of exotic compound semiconductor materials one crystal at a time, you need a molecular beam epitaxy system that is configurable for different applications.
-
product
Ion Sources
Veeco offers the most comprehensive array of ion beam sources for a broad range of applications, including the industry's only Linear gridded sources.
-
product
Medium-Temperature
Medium-temperature processing systems deliver more thermal energy than low-temp tools can provide, without crossing into the stress-inducing range of high-temp processes. Operating between 200–600°C, they create the perfect balance for enabling critical film transformations, crystallization and adhesion. Medium-temperature MBE sources can be used for virtually any application—from hot-lip SUMO sources to standard filament for thermal effusion.
-
product
ALD Services
Our ALD Services help engineers optimize, troubleshoot, and scale their processes, covering everything from custom process development to equipment calibration and advanced film characterization.
-
product
Diamond-Like Carbon: High-Performance Coatings for Extreme Applications
When durability matters, Diamond-Like Carbon (DLC) coatings deliver. Known for their hardness, low friction, and chemical resistance, DLC films are the go-to solution for protecting surfaces in high-stress environments: from precision mechanical parts to advanced semiconductor devices.
-
product
Low Temperature Gas Source
Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.
