Veeco Instruments Inc
Provides metrology and process equipment systems for industry leaders in the semiconductor, data storage, telecom/wireless and scientific/research markets.
- (516) 677-0200
- 1 Terminal Drive
Plainview, NY 11803
United States of America
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ALD For Research & Development
Veeco’s atomic layer deposition research systems are designed by ALD scientists and built for maximum experimental flexibility and value. With universal precursor delivery systems, you can use solid, liquid or gas chemistries in any precursor port. There are many options to choose from including ozone generators, in-situ monitoring and various configurations. As always, our team of ALD scientists are ready to answer your recipe development and film characterization questions. Over 2500 published academic papers feature research performed on our Savannah® thermal ALD system and Fiji® plasma ALD system.
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Ion Sources
Veeco offers the most comprehensive array of ion beam sources for a broad range of applications, including the industry's only Linear gridded sources.
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MBE systems
GEN Family
Veeco provides the industry’s broadest line-up of innovative and reliable molecular beam epitaxy (MBE) systems.
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Sputtering Systems
Known for precision and cleanliness, Veeco Ion Beam Sputtering (IBS) systems are ideal when engineers need tight control over film thickness, composition, and optical performance. Using a focused ion beam, IBS dislodges atoms from a target, depositing them onto a surface in smooth, ultra-uniform layers.
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MOCVD Systems
For growing high-quality compound semiconductor films, few techniques match the precision of Metal-Organic Chemical Vapor Deposition (MOCVD). They give engineers tight control over film composition and thickness, making them essential for optoelectronics and advanced power transistors.
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Low Temperature Gas Source
Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.
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Diamond-Like Carbon: High-Performance Coatings for Extreme Applications
When durability matters, Diamond-Like Carbon (DLC) coatings deliver. Known for their hardness, low friction, and chemical resistance, DLC films are the go-to solution for protecting surfaces in high-stress environments: from precision mechanical parts to advanced semiconductor devices.
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Gas and Vapor Delivery Systems
In thin film deposition, high-quality results start with how process gases are delivered, as they help create the stable environment needed for consistency by controlling flow, pressure and composition to support processes like ALD, CVD, and PVD. Advanced semiconductor devices developed for the most advanced computing processes, such as AI and edge computing, need the ultra-high-purity environments of our gas and vapor deposition delivery systems.
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Dopant
In semiconductor manufacturing, electrical performance starts with atomic-level control. Dopant technologies make that possible by introducing carefully measured doping constituents that help devices conduct, switch and perform reliably. For precise control of fluxes for Molecular Beam Epitaxy (MBE) dopant constituents, or for gases that do not require thermal cracking, Veeco’s Dopant products are ideal.
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Ion Beam System
Veeco's unmatched Ion Beam know-how delivers proven etch and deposition performance enabling the data storage and MEMS markets for decades.
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Etch System
When it comes to clean etches, Veeco’s Ion Beam Etch (IBE) systems deliver with sharp control and minimal disruption. Using a focused argon ion beam, this subtractive technique etches nanoscale features with precision, making it a go-to for pattern transfer, layer removal, and surface refinement where edge definition matters most.
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EpiStride SiC CVD System
Veeco’s latest technology for the compound semiconductor market enables high-performance chemical vapor deposition of Silicon Carbide for both 6 and 8-inch wafer production. The platform enables a return to production in under 5 hours after routine cleaning maintenance. The EpiStride system’s high uptimes, short cycle times and overall stable performance lead to the lowest cost of ownership per wafer compared to competitive systems.
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ALD Advantages
Atomic Layer Deposition (ALD) stands out for one reason: control. The most significant advantages of thin film deposition via Atomic Later Deposition over other methods, are manifest in four distinct areas – film conformality, low temperature processing, stoichiometric control, and inherent film quality associated with the self-limiting, and self-assembled nature of the ALD mechanism ALD is exceptionally effective at coating surfaces that exhibit ultra high aspect ratio topographies, as well as surfaces requiring multilayer films with good quality interfaces technology. This thin-film process builds materials one atomic layer at a time, delivering unmatched uniformity and sub-nanometer precision, even on complex 3D structures. That level of accuracy makes ALD a critical technology for advanced semiconductor manufacturing, flexible electronics, and materials research.
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Gridded RF Ion Sources
Veeco's gridded RF ion sources are designed for improved production of long-run ion beam deposition processes.
