Showing results: 1 - 15 of 112 items found.
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AC Photonics, Inc.
Photodiodes are a type of detector, devices that generate an electrical signal when illuminated by light. ACP offers a variety of different types of photodiodes, including InGaAs PIN photodiodes.
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Avalanche -
Laser Components IG, Inc.
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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Optilab, LLC.
A high sensitivity receiver in a fiber pigtail coupled package, it includes a high speed InGaAs avalanche photodiode with a high gain TIA in a hermetically sealed coaxial package. It incorporates an LC/UPC pigtail and a flexible printed circuit (FPC). The signal GND and a receptacle are electrically isolated in this APD receiver.
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Opto Diode
Opto Diode manufactures high quality standard and custom photodiodes. Our wide range of standard device feature low dark current and low capacitance. The silicon detectors are ideal for general purpose applications, laser monitoring, position sensing, measuring photons, electrons, or X-rays, or for detecting sun and rain applications. The devices operate from the deep UV to the near-infrared wavelengths.
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Si APDs -
LT Laser Tools GmbH
Silicon avalanche photodiodes are used in the wavelength range between 250 nm and 1100 nm. The avalanche effect of these photodiodes makes them well suited for the detection of extremely weak light intensities.
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Excelitas Technologies Corp.
Excelitas offers Avalanche Photodiodes (APDs) on both Silicon (Si) and InGaAs materials. Si APDs cover the spectral range of 400 nm to 1100 nm and the InGaAs APDs cover 950 nm to 1550 nm. An Avalanche Photodiode (APD) provides higher sensitivity than a standard photodiode and is for extreme low-level light (LLL) detection and photon counting.
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Edmund Optics Inc.
These avalanche photodiodes (APDs) are silicon photodiodes with an internal gain mechanism. As with a conventional photodiode, absorption of incident photons creates electron-hole pairs. A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization. The resulting electron avalanche can produce gain factors up to several hundred.
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Excelitas Technologies Corp.
Excelitas utilizes Silicon and InGaAs materials for our photodiodes to provide detection from 220 nm to 1700 nm. These devices are offered in a variety of sizes to meet customer sensitivity and speed requirements. Many different types of photodiodes are available to serve various unique applications.
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Laser Components IG, Inc.
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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LT Laser Tools GmbH
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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Appointech, Inc.
PIN photodiode is a kind of photo detector, it can convert optical signals into electrical signals.This technology was invented in the latest of 1950's. There are three regions in this type of diode. There is a p-region an intrinsic region and an n-region. The p-region and n-region are comparatively heavily doped than the p-region and n-region of usual p-n diodes. The width of the intrinsic region should be larger than the space charge width of a normal p-n junction. The PIN photo diode operates with an applied reverse bias voltage and when the reverse bias is applied, the space charge region must cover the intrinsic region completely. Electron hole pairs are generated in the space charge region by photon absorption. The switching speed of frequency response of photo diode is inversely proportional to the life time. The switching speed can be enhanced by a small minority carrier lifetime. For the photo detector applications where the speed of response is important, the depletion region width should be made as large as possible for small minority carrier lifetime as a result the switch speed also increases.
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mks Ophir
Ophir photodiode laser energy sensors are able to measure low energy pulses down to 10pJ at frequencies up to 20 kHz. Silicon photodiodes for the UV and visible spectrum and Germanium photodiodes for infrared.
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SolGel Technologies GmbH
active areas from 0.06 mm² to 36 mm² and quadrant photodiodes for position determinationUV broadband sensitivity or with optional filters for UVA, UVB, UVC or UV indexdifferent entrance windows and housing designsown SiC chip production since 2009PTB-published high radiation hardnessPhotodiodes catalog
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Macom Technology Solutions Holdings Inc.
MACOM offers the highest sensitivity avalanche photodiodes (APD) on the market to satisfy 10Gtelecom and datacom applications. Both front-illuminated and back-illuminated chips are available and usable from 1250 to 1650 nm for bit rates up to 11.3 Gb/s. Proprietary designs enable superior bandwidth, excellent temperature stability and high reliability to support market needs.
