Rad Hard Load Switches

Renesas' radiation hardened load switches provide a simpler and smaller way to turn on and off your power rails in multi-rail power systems compared to a discrete FET. Load switches are also ideal for redundant power distribution, power sequencing and input-output protection of POL based power distribution systems.

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Rad Hard Power

Renesas Electronics Corp.

Renesas' radiation hardened (rad hard) power products achieve the stringent voltage accuracy required of FPGAs, ASICs, microprocessors, and microcontrollers used in space and harsh environment applications. Our solutions enable regulation accuracy over input voltage, load current variation, switching noise, and large load transients and have proven highly reliable within mixed radiation exposure rates and other harsh environment variants.

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Rad Hard GaN Drivers

Renesas Electronics Corp.

The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.

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Rad Hard MOSFET Drivers

Renesas Electronics Corp.

Renesas' broad portfolio of radiation hardened MOSFET drivers provide highly reliable performance in space and harsh radiation environments.

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Rad Hard Switching Controllers

Renesas Electronics Corp.

Renesas' high-performance, radiation hardened PWM controllers are suitable for a wide range of power conversion applications including boost, flyback, isolated output configurations, and voltage or current mode switching power supplies.

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Rad Hard GaN FETs

Renesas Electronics Corp.

Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.

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Rad Hard Power Sequencing

Renesas Electronics Corp.

Renesas' radiation hardened quad power supply sequencers are designed to drive point-of load (POL) regulators that power high performance FPGAs and complex, multi-rail power systems.

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Rad Hard Switching Regulators

Renesas Electronics Corp.

Renesas' radiation hardened switching regulator portfolio consists of radiation and single event effects (SEE) tolerant and radiation and SEE hardened high-efficiency synchronous buck regulators with integrated MOSFETs.

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Rad Hard Linear Regulation

Renesas Electronics Corp.

Renesas' radiation hardened linear regulators (LDOs) are optimized for fast transient response and single event effects (SEE). These LDOs are designed to provide highly reliable performance in harsh radiation environments.

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Rad Hard Source Drivers

Renesas Electronics Corp.

Renesas' radiation hardened source driver products reduce the size, weight and power of satellite subsystems such as command and telemetry control and communication satellite payloads, enabling satellite manufacturers targeting various mission profiles to significantly increase system capacity and reduce solution footprint by 50 percent.

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Rad Hard Supervisory

Renesas Electronics Corp.

Renesas' radiation hardened supervisory circuits reduce the complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to discrete solutions.

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