Software

Gate Oxide Integrity Option - Materials Development Corporation (MDC)

Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent Dielectric
Breakdown, Charge to Breakdown, or ramped voltage. When used with a prober, map distribution of breakdown fields. Output the data using histograms, cumulative
failure, or Weibull plots.

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Data
Distribution
Integrity
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Time
Voltage