DRAM DDR4 Memory
Improve performance up to 50% (compared to DDR3.) with Advantech! We offer industrial grade DDR4 2666/2400/2133 memory with 30μ" gold plating connector (288 pin), featuring 1.2v low operating voltage and faster burst accesses.
-
Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
Memory Module
DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
-
Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
Memory Module
8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
-
Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
-
Product
32GB DDR4-3200 2GbX8 1.2V Samsung Chip
AQD-D4U32GN32-SB
Memory Module
32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
-
Product
8GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U8GE32-SE
Memory Module
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
-
Product
16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U16GE32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
-
Product
32GB DDR4-3200 2GbX8 1.2V ECC Samsung Chip
AQD-D4U32GE32-SB
Memory Module
32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
-
Product
Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2V
96D4-8G3200ER-MI
-
DDR4-3200 Registered ECC DIMM, 1.2V power consumption, Supports ECC error detection and correction. Data bus inversion (DBI) for data bus, Low-power auto self refresh (LPASR).
-
Product
8G DDR4-3200 1GbX8 1.2V SAM -40~85C
AQD-D4U8GN32-SEW
Memory Module
DDR4 3200Mhz Unbuffered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, 100% tested for stability, compatibility and performance.
-
Product
16G DDR4-3200 1GbX8 1.2V SAM -40~85C
AQD-D4U16N32-SEW
Memory Module
DDR4 3200Mhz Unbuffered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, 100% tested for stability, compatibility and performance.
-
Product
32G DDR4-3200 2GbX8 1.2V SAM -40~85C
AQD-D4U32N32-SBW
Memory Module
DDR4 3200Mhz Unbuffered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, 100% tested for stability, compatibility and performance.
-
Product
16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
Memory Module
Registered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
