Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
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Customized Software
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Materials Development Corporation
If the software packages offered do not meet your specific needs,special software can be written for custom applications.The engineers and programmers at MDC candevelop or modify applications to fit your requirements. Examples include: *Customer specific measurements *Interfacing with required meters *Production versions of measurements *Interfacing with probers and other measurement platforms *Specialized requirements
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Triangular Voltage Sweep (TVS) Option
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Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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Copper Diffusion TestSystems
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Materials Development Corporation
MDC announces the addition of software and hardware for copper diffusion studies to its CSM/Win suite of semiconductor test systems and software. This new CSM/Win feature plays an important part in the development of processes and materials for the next advance in integrated circuit technology that employscopper as a conductor. Special Current-Voltage Bias-Temperature Stress (IV-BTS) software can measure the degradation of insulator quality due to copper diffusion.Multiple test sites can be stressed with a constant voltage while the current through each site is measured and recorded. The Current-Voltage Bias-Temperature Stress test supplements conventional MOS C-V measurements and Triangular Voltage Measurements (TVS) that are also employed in copper diffusion studies.
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Srive-Level Capacitance Profiling (DLCP) Measurement
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Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Interface Trap Density Analysis Option
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Materials Development Corporation
MDC offers interface trap density analysis using both the Conductance-Frequency and Quasi-statictechniques. The Conductance-Frequency method is recommended for fine-tuning of processes where the highest resolution is needed. The Quasi-static technique is recommended where moderate to high levels of interface traps are monitored, such as in radiation damage studies. Requires quasi-static option or variable frequency option.
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Electrochemistry Tests
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Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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MOS C-V Measurement and Analysis
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Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Overlay Plots
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Materials Development Corporation
The overlay option gives the user the ability to overlay several plots on one graph for comparison. Simply click and drag the mouse from the MDC logo at the bottom right corner of a plot to an open area on the screen to produce the overlay plot. By dragging other plots to this overlay, each plot will be added.
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Production C-V Measurement
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Materials Development Corporation
The production software offers a streamlined C-V plotting and bias-temperature stress program with minimumoperator input. A single keystroke begins the measurement.
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Junction Measurement and Analysis
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Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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MOS Doping Profile Analysis
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Materials Development Corporation
MDC uses the comprehensive Ziegler algorithm toconvert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
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Quasi-Static Measurements
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Materials Development Corporation
The Quasi-static measurement ompares a high frequency capacitance-voltage plot to a C-V plot measured near zero Hertz (quasi-static). By analyzing the difference in the depletion region of the curves, the interface trap density (Dit) can be determined in the sample under test.
