Showing results: 16 - 30 of 97 items found.
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Renesas Electronics Corp.
Renesas' broad portfolio of radiation hardened MOSFET drivers provide highly reliable performance in space and harsh radiation environments.
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Semiconductor Module -
COMSOL, Inc.
The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions.
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Renesas Electronics Corp.
Renesas' family of low-side FET drivers are very high-speed matched dual-drivers capable of delivering peak currents of 2.0 amps into highly capacitive loads and excellent at driving large capacitive loads with minimal delay and switching times. The high-speed performance is achieved by means of a proprietary "Turbo-Driver" circuit that speeds up input stages by tapping the wider voltage swing at the output. Improved speed and drive capability are enhanced by matched rise and fall delay times. These matched delays maintain the integrity of input-to-output pulse-widths to reduce timing errors and clock skew problems. This improved performance is accompanied by a 10 fold reduction in supply currents over bipolar drivers, yet without the delay time problems commonly associated with CMOS devices. Dynamic switching losses are minimized with non-overlapped drive techniques.
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Carl E. Holmes Company
- Active Switching Power Supply Using MOSFET, 125 KW, P/N 5940C2- Input: 480 VAC, 150 Amps, 3 PH, 60 Hz- Output: 0 to 50 VDC, 2500 Amps max- Ten modules in parallel, each module is rated for 0 to 50 VDC, 300 Amps- PLC Control provides Positive Polarity, Negative Polarity and Shuts OFF- Start / Stop capability and EPO- Output voltage and current are displayed on the voltmeter and ammeter- PLC supplied by the customer. We provide a PLC interface only- Indoor enclosure dimensions: 65″W x 50″H x 36″D or (TBD)- Estimated weight: 2000 lbs. or (TBD)
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Renesas Electronics Corp.
Renesas' ORing MOSFET Controllers with a suitably sized N-Channel power MOSFET(s) increase power distribution efficiency and availability when replacing a power ORing diode in high-current applications. They provide gate drive voltage for the MOSFET(s) with a fully integrated charge pump.
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Microchip Technology Inc.
Our power discrete products are high-quality solutions for a wide range of high-voltage and high-power applications. They include a variety of high-voltage Switch Mode Power Supply (SMPS) transistors—Insulated-Gate Bipolar Transistors (IGBTs) Silicon Carbide (SiC) MOSFETs and Silicon MOSFETs—Diodes and Radio Frequency (RF) MOSFETs. Many of our products are offered in single- and combi-packaged options across a variety of voltage ratings, currents, and package styles.
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QT-3000 Series -
PowerTECH Co,Ltd.
Developed for thermal resistance test of Transistor MOSFET IGBT DIODE.
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Silicon MOSFET -
Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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TRd, TRs, TRds equipment family -
LEMSYS
The equipment is designed to test IGBTs, MOSFETs and free wheeling Diodes from single chip to complex power modules and IPMs.
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Vishay Intertechnology, Inc.
The Next Generation VRPower® Power Stage, Vishay’s family of VRPower modules offers an integrated MOSFET and driver power stage with unsurpassed performance. The flagship device, SiC620R is capable of 70 A and achieves more than 95 % efficiency in a typical multiphase buck converter design. The device has several package enhancements that enable it to offer superior MOSFET dynamic performance. Combined with Vishay’s state-of-the-art Gen IV MOSFET technology, these enhancements enable 3 % better efficiency and over 50 °C lower operating temperatures compared to previous generation DrMOS devices while shrinking the footprint by 33 %.
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Renesas Electronics Corp.
Renesas' high-performance DrMOS power modules combine a high-performance FET driver and MOSFETs in an advanced package to create high-density DC/DC converters.
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W7025E -
Keysight Technologies
The W7025E PathWave IC-CAP BSIM4 Model Extraction Package provides measurement and extraction procedures for the BSIM4 industry-standard model for MOSFET devices.
