MOSFET
Metal Oxide Semiconductor Field Effect Transistor
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Automated Discrete Semiconductor Tester (ATE)
5000E
Same Proven Technology as all 5000 Series Testers. High Speed Single Test Measure. Capable of Testing Multiple and Mixed Devices. 1KV Standard, 2KV Optional. 1NA to 50A Standard, 100A Optional. 0.1NA Resolution. Complete Self Test. Auto-Calibration. RDSON to 0.1MOHM Resolution. Windows Application Software. Optional Scanner. Optional Wafer Mapping. Optional Curve Trace. MOSFET, IGBT, J-FETTriac, SCR, Sidac, Diac, Quadrac, STS, SBS Transistor, Diode, Opto, Zener Regulator, MOV, Relay. UNDER $23,000.00
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MOSFETs For High Frequency Amplifier
The MOSFETs shown below are best suited for amplification of high-frequency signals.
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Floating Power FET moduleAmp Loop
PFM1010
The PFM1010 Module is a precision instrument capable of measuring all common DC parameters in a power MosFet as well as many of the AC parameters. This module uses some very innovative techniques to make it possible to measure parameters like Rdson down into the sub-million-ohm range.
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Gate Drivers
A necessary companion for discrete power MOSFETs and IGBTs as well as digital – microcontrollers, DSPs and FPGs – or analog controllers in any switched-mode power converter, STDRIVE gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications.
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MOSFETs For High Frequency Amplifier
The MOSFETs shown below are best suited for amplification of high-frequency signals.
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Inverters
Analytic Systems has been producing Pure Sinewave Inverters since 1994. Originally designed for running navigation computers on commercial and fishing vessels, the line has evolved into a range of models with power outputs from 300 to 3600 watts featuring Digital Signal Processor control. High power MosFet technology creates a low voltage Sinewave that is fed into a compact toroidal step-up transformer to produce a very clean low EMI AC output. Northrup Grumman evaluated inverters from all major manufacturers and chose the IPSi series by Analytic Systems for their Army portable command centers for precisely this reason.
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Automotive Power
The automotive power lineup can support a variety of automotive system requirements and includes intelligent power switches, thermal FETs, MOSFET drivers, and a motor driver.
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PathWave IC-CAP BSIMSOI Model Extraction Package
W7023E
The W7023E PathWave IC-CAP BSIMSOI Model Extraction Package provides measurement and extraction procedures for BSIMSOI industry-standard model for Silicon-On-Substrate (SOI) MOSFET devices.
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32CH 4-20mA Current Sink Card
SET-1250
Each channel provides an isolating relay and a short-circuit MOSFET with which opening and short-circuit errors can be simulated. The short-circuit MOSFET has overcurrent protection with integrated current limitation.
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AMIDA ATI 600 Tester
AMIDA ATI 600 Tester is a dedicated test system for semiconductor components (MOSFET, BJT, DIODE, ... etc.), which can accurately and quickly measure product parameters through form filling and editable program control. In practical applications, AMIDA ATI 600 Tester is the best choice for users, whether it is CP or FT mass production testing, or research projects of component characteristics.
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Brush DC Drivers
Allegro provides a broad portfolio of safe and robust brush DC solutions. With both integrated and MOSFET gate drives our product lines are ideal for low- and high-power applications alike. Increased digital content with embedded drive algorithms simplify your implementation, while enhanced diagnostics and protection features ensure a safe and reliable solution.
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Unclamped Inductive Load Tester
ITC55100STD
Model ITC55100STD performs ruggedness testing of power MOSFETs and IGBTs. It also tests single and dual diodes, and forward and reverse bias of IGBTs when used with an optional ITC55-RSF Output Selector Box.
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Modules - Modules, Automotive
Automotive modules from Vishay feature a range of technologies including FRED Pt®, High Voltage, MOSFETs, and Silicon Carbide (SiC).
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ORing FET Control
Renesas' ORing MOSFET Controllers with a suitably sized N-Channel power MOSFET(s) increase power distribution efficiency and availability when replacing a power ORing diode in high-current applications. They provide gate drive voltage for the MOSFET(s) with a fully integrated charge pump.
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Active Switching Power Supply Using Mosfet, 125 KW, P/N 5940C2
- Active Switching Power Supply Using MOSFET, 125 KW, P/N 5940C2- Input: 480 VAC, 150 Amps, 3 PH, 60 Hz- Output: 0 to 50 VDC, 2500 Amps max- Ten modules in parallel, each module is rated for 0 to 50 VDC, 300 Amps- PLC Control provides Positive Polarity, Negative Polarity and Shuts OFF- Start / Stop capability and EPO- Output voltage and current are displayed on the voltmeter and ammeter- PLC supplied by the customer. We provide a PLC interface only- Indoor enclosure dimensions: 65″W x 50″H x 36″D or (TBD)- Estimated weight: 2000 lbs. or (TBD)
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MOSFETs For Amplifier
These are enhanced power MOSFETs with excellent frequency characteristics. They are ideal for audio amplifier output.
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Test System
ITC57300
The ITC57300 Dynamic Parametric Test System mainframe accepts Test Heads that perform nondestructive transient measurements on semiconductor devices such as Insulated Gate Bipolar Transistors (IGBT), power MOSFETs, diodes, and other bipolar devices(requires additional optional bias power supplies and custom personality boards). Included in the mainframe are all test equipment and software necessary to analyze and perform resistive and inductive switching time, switching losses, gate charge, Trr/Qrr, and other transient tests.
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Brushless DC Drivers (BLDC)
Covering a wide range of power systems, our integrated MOSFET and gate driver ICs thrive in automotive, industrial, and consumer applications, ranging from 3.5 to 100 V operating voltage.
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DCDC
DP Series
The DP family is an economically priced high performance series of regulated DC/DC converters offering single and dual outputs. Features include MOSFET design operating at a switching frequency of 100Khz, continuous short circuit protection, LC input filter, 500 Vdc I/O isolation, and an operating temperature range of -25°C to +71°C with no derating. These miniature converters maintain excellent regulation over varying line and load conditions (0.2% for line and 0.5% for load). They are packaged in an IC compatible 24 pin DIP configuration measuring 1.25” x 0.8” x 0.4” high.
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Thermal FETs
Pin-compatible with standard Power MOSFET packages and built-in over temperature protection function for body, lighting and heater applications, as well as powertrain applications and 24V battery system applications.
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Device Thermal Test Systems
Thermal Engineering Associates, Inc.
Thermal test system combines the test and measurement capability of dedicated instruments with the ease of operation and data collecting capability offered by graphical-user-interface-driven software operating on an integrated computer.Diodes (PN, Schottky, LED, varactor, PIN), Stacked Diodes (Hi-V Rectifiers & LEDs), Laser Diodes, Transistors (Bipolar, MOSFET, IGBT) & Diodes, Integrated Circuits (Application & Thermal Test Die).
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Space Power Solutions
Teledyne e2v HiRel Electronics (HiRel) offers leading edge power solutions dedicated for high-reliability applications. The introduction of Galium Nitride (GaN) technology solutions enable high power density designs with four times less space requirements than traditional MOSFETs. The Teledyne HiRel Point-of-Load (POL) products combine multiple load capabilities, outstanding radiation performance with high levels of integration and easy to use features.
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Thermal Characterization Testing Services
Thermal Engineering Associates, Inc.
Thermal Characterization - TEA offers this service to customers having need for precise thermal parameter values for product data sheets, purchase specifications, specific application configurations, and/or device comparisons. This service is offered for a wide range of Discrete Devices (i.e., Bipolar Junction Transistors, MOSFETs, IGBTs, Diodes, SCRs, Triacs) and Integrated Circuits (i.e., digital, linear and mixed-signal devices).
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Power ICs - VRPower® (DrMOS) - Power Stage
The Next Generation VRPower® Power Stage, Vishay’s family of VRPower modules offers an integrated MOSFET and driver power stage with unsurpassed performance. The flagship device, SiC620R is capable of 70 A and achieves more than 95 % efficiency in a typical multiphase buck converter design. The device has several package enhancements that enable it to offer superior MOSFET dynamic performance. Combined with Vishay’s state-of-the-art Gen IV MOSFET technology, these enhancements enable 3 % better efficiency and over 50 °C lower operating temperatures compared to previous generation DrMOS devices while shrinking the footprint by 33 %.
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DCDC
QQA Series
The QQA series features the latest in MOSFET design, state of the art surface mount technology, and offers a 4:1 ultra-wide input range, and efficiencies greater than 80% (typ). Features include continuous short circuit protection, 500 Vdc I/O isolation, and an operating temperature range of -25°C to +71°C with no derating. All models are packaged in a six-sided shielded miniature case measuring only 1.0” x 2.0” x 0.4” high.
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Inductive Load Tester
4602-LV
There is a tendency that MOSFET has Low On Resistance so that it demands that Inductive Load Tester to have higher forcing current for measurement. The forcing current is limited by forcing voltage with previous test method. Thus it becomes difficult to test this kind of middle power range devices.
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Power MOSFETs
ST's power MOSFET portfolio offers a broad range of breakdown voltages from –100 to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST's process technology for both high-voltage power MOSFETs (MDmesh™) and low-voltage power MOSFETs (STripFET) ensures an enhanced power handling capability, resulting in high-efficiency solutions. Power MOSFETs belong to the STPOWER family.
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DCDC
Hua/Hud Series
The HUA/ HUD is a cost-effective series of DC/DC converters, offering both single and dualoutputs. These unregulated converters offer the latest in MOSFET technology. Featuring efficiencies to 80%, cool operating case temperatures and a high level of reliability with a MTBF in excess of 1,000,000 hours. Additional standard features include an internal Pifilter, 500 Vdc I/O isolation, up to 12 watts of output power and operating temperature of –25°C to +71°C with no derating. All this in a package measuring 2.0” x 2.0” x 0.40” high.
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MOSFETs
Products for a variety of applications, such as power supply, motor drive, high frequency amplification, and load switches.
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SiC MOSFETs
Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks to SiC MOSFETs. With an extended voltage range, from 650 to 2200 V, ST's silicon carbide MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance per area.
