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Product
16GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U16GN32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
32GB DDR4-3200 2GbX8 1.2V Samsung Chip
AQD-D4U32GN32-SB
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32GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U16GE32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-SD5V8GN56-HC
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Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V16GN56-SBH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
8GB DDR4 SODIMM-3200 1GbX8 SAM
AQD-SD4U8GN32-SE
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DDR4 3200Mhz Unbuffered SO-DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance, 1.2V power consumption. Samsung original chip, 100% tested for stability, compatibility and performance.
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Product
Rugged SODIMM DDR4 2666/3200 Wide Temperature
SQR-YD4I
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Robust PCB designed with Mounting Hole with Military MIL-810G verified. Extreme Data Transfer rate up to 3200 MT/s, Capacity: up to 32GB. Wide Temperature supported: -40°C ~ 85 °C, Original IC chip (Samsung/Hynix).
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Product
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GE56-SB
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SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
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8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
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SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
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Registered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
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Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
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8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
Wide Temperature Server DIMM
SQR-RD4M
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Original Hynix IC chip adopted, Wide operating temperature support -25~85oC, Data transfer rate up to 3200 MT/s.
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Product
4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip
AQD-D4U4GR24-SG
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DDR4-2400 Registered DIMM. – standard height, 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption. Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity.
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Product
QML Memory
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DPA Components, International (DPACI) has answered the call by offering our own line of QML Military memory SRAM products.
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Product
IP-Reflective Memory
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Each IP-ReflectiveMemory can be used as a standard node or as the Master Node. Clearly labled "DIP Switches" are provided to make the selection of Master or Standard Node, and the Node Address. The Network is based on using LVDS signaling over Ethernet cabling. Nodes automatically come up for pass through operation.
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Product
Industrial Flash & Memory Solutions DDR4 Memory
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SQRAM DDR4 memory modules perform at superior speeds of up to 3200 MT/s, a 20% reduction in power consumption, and higher capacity than DDR3.
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Product
Memory Tester
RAMCHECK LX DDR3
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Quickly test DDR3 DIMM and SO-DIMM memory. In just seconds, RAMCHECK LX will perform a thorough test of the module and provide complete identification. Also tests expensive LRDIMM modules.
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Product
Memory Burn-In Test
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The N3500 is Neosem Technology’s fourth generation memory test system. Specifically designed for Flash Components and Flash Cards, the N3500 tester-on-a-board architecture targets the broadest range of DUT technologies in various form factors and packages. Each Tester Board (or “Blade”) contains 288 I/O pins and 32 DPS supplies.
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Product
Memory And Storage
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Intel provides technically advanced products that support every level of computing—from data center workloads to enthusiast usage. Intel® Optane™ memory creates an accelerated bridge between memory and storage. Intel® Solid State Drives (Intel® SSDs) provide storage flexibility, stability, and efficiency.
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Product
DRAM Memory Module
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Choose the perfect memory solution for your application with Advantech! We offer a full range of industrial-grade RAM memory modules, covering all technologies including DDR4, DDR3, DDR2, DDR with diverse features like Unbuffered, Registered, and ECC.
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Product
Memory Test System
T5833/T5833ES
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T5833 system is a cost-efficient, high-volume test solution capable of performing both wafer sort and final test of DRAM and NAND flash memory devices. Amid surging sales of mobile electronics, DRAMs, NAND flash memories and multi-chip packages (MCPs) — the main device types used in smart phones and tablets — are quickly evolving toward higher speeds and greater device capacity. Internet and cloud servers also are driving demand for faster, higher-capacity ICs. Yet the cost of testing today's wide array of memory devices is an obstacle for chipmakers, which urgently require solutions that can deliver high functionality, high performance and low cost of test (COT). Advantest's new, multifunctional T5833 memory test system meets these needs, delivering both wafer sort and final test capabilities for a full range of memory devices, including LPDDR3-DRAMs, high-speed NAND flash memories and next-generation non-volatile memory ICs.
