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Product
120 GBd High-performance BERT
M8050A
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The Keysight M8050A high-performance bit error ratio tester (BERT) enables accurate characterization of receivers used in next-generation data center networks and server interfaces. With uncompromised signal integrity, support for NRZ, PAM4, PAM6, and PAM8 signals, and data rates up to 120 GBd, the flexible architecture of the M8050A supports 1.6T pathfinding as well as other leading-edge technologies.
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Product
Hoist Tester
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The system has the capability of operating hyraulic powered hoists, DC powered hoists and 400Hz AC powered hoists. When a unit is connected to the system it is automatically detected and the system will load the unit's control software, acceptance procedures and operational safety limits. By doing all of this the operator does not need to worry about anything other than installing the unit and clicking Run to execute a full test procedure.
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Product
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-SD5V32GN56-SBH
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
ABex PXI to Analog Bus Bridge with Digital IOs
ABex AM-300 Controller
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The ABex system controller ABex AM-300 is required to control the analog bus of a ABex chassis. It is used as an interconnection bridge between PXI and ABex backplane.In addition it features a whole bunch of additional functionality. Despite the 96 open drain outputs it has galvanically isolated IOs, and communication interfaces.
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Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
16GB ECC DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GE56-SB
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SAM Original Chip, Anti-sulfuration, PCB: 30μ gold finger. Independent Power Management IC build-in, ECC function support.
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Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
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SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
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Product
MXE EMI Test Receiver, 3 Hz to 44 GHz
N9038B
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The Keysight N9038B is a standards-compliant MXE EMI test receiver and diagnostic signal analyzer built on an upgradeable platform. You choose the frequency coverage you need to fully test devices with outstanding accuracy and sensitivity across required ranges.
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Product
8GB DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-D4U8GN32-SE
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8GB, DDR 4 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
4G DDR4-3200 512X16 1.2V SAM -20~85℃
AQD-SD4U4GN32-SP2
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SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger. Anti-sulfuration, Semi Wide-temp Support -20~85℃.
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Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
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16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
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Product
PAM4 Bit Error Rate Tester.
BERT-1102
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The BERT-1102 is a 4 or 8-channel PPG and Error Detector for the design, characterization and manufacturing test of optical transceivers and opto-electrical components with symbol rates up to 29 GBaud/s in both NRZ and PAM4 formats. With scalability and exceptional signal fidelity, it is a cost-effective test solution for up to 400 Gb/s communication eco-systems.
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Product
8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-SD4U8GE32-SE
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8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
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Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
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SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
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Product
Industrial Memory DDR2 Memory
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SQRAM DDR2 memory modules deliver 667/800 MT/s frequency with longevity support for legacy markets.
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Product
SODIMM DDR4 3200MT/s
SQR-SD4S
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Original Hynix IC chips adopted, Data transfer rate: 3200MT/s. Capacity: 4/8/16/32GB, Operating temperature: 0 °C ~ 85 °C Lifetime warranty.
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Product
Industrial Memory
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Advantech SQRAM Industrial Memory solutions offer an extensive portfolio of industrial grade DRAM solutions, such as UDIMM, SODIMM, ECC-DIMM, RDIMM, and LRDIMM designed according to the JEDEC standards and cover all technologies including DDR, DDR2, DDR3, DDR4 in wide temp ranges (-40 to 85°C).
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Product
Industrial Flash & Memory Solutions DDR4 Memory
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SQRAM DDR4 memory modules perform at superior speeds of up to 3200 MT/s, a 20% reduction in power consumption, and higher capacity than DDR3.
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Product
Memory Burn-In Tester
H5620/H5620ES
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H5620 contributes to reduction of test cost by integrating the test process of DRAM Burn-in and Core Test. This hybrid memory test solution solves the challenge of reducing test costs while increasing test efficiency in the expanding DRAM market.
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Product
Error Detector Remote Head 32 and 17 Gb/s
N4952A
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The N4952A is an affordable and compact error detector remote head available in 4 to 17 Gb/s and 5 to 32 Gb/s configurations. Compatible with the N4960A Serial BERT controller, it is the perfect solution to test up to 32 Gb/s per channel for 100 Gigabit Ethernet applications and other high-data rate devices. The N4952A error detector supports PRBS or user patterns and operates up to 32 Gb/s in a single band with no gaps or missing data rates. The remote head allows the test equipment to be located very close to the device under test, eliminating the need for long cables that degrade signal quality.
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Product
Memory Test System
T5221
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The T5521 is a memory test system that supports wafer test and wafer burn-in test of non-volatile memory devices such as NAND flash, housed within a multi-wafer prober to reduce test floor footprint.
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Product
Gearbox Tester
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The gearbox tester was designed to test the Azimuth Drive Unit (ADU) for a missile launcher. The ADU is the horizontal position controller for the launcher. It consists of a main drive shaft, a manual drive shaft and an output drive shaft. This system uses a multi-axis motion controller to operate.
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Product
Memory Test System
T5830/T5830ES
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Highly flexible tester which has all of the capabilities needed to perform wafer sorting and final testing of price-sensitive flash memories
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Product
DRAM Memory Module
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Choose the perfect memory solution for your application with Advantech! We offer a full range of industrial-grade RAM memory modules, covering all technologies including DDR4, DDR3, DDR2, DDR with diverse features like Unbuffered, Registered, and ECC.
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Product
Memory Burn-in Tester
B6700 Series
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B6700 can test as many as 48 burn-in boards in parallel at speeds up to 10 MHz, which helps memory suppliers get their newest products to market faster while also reducing testing costs. An original high performance chamber improves yield by assuring high temperature accuracy while generating high temperature. It also shortens the temperature rise and fall time which leads to shortening the test time.
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Product
Memory Test Systems
T5503HS2
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Semiconductor memories are in high demand to meet the needs of fast-growing end markets such as portable electronics and servers. It has been forecasted that applications ranging from mobile devices and data centers to automobiles, gaming systems and graphics cards will consume an estimated 120 billion gigabits of DRAM capacity. To meet this market demand, new generations of memories with data-transfer speeds of 6.4 Gbps and higher are being developed. Advantest’s second-generation T5503HS2 tester is designed to handle these ultra-high-speed memory ICs.
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Product
Wide Temperature Server DIMM
SQR-RD4M
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Original Hynix IC chip adopted, Wide operating temperature support -25~85oC, Data transfer rate up to 3200 MT/s.
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Product
Memory
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Renesas is renowned for its product lifetimes, and our memory products are no different. Our wide range of low power SRAM products provide high reliability, stable supply and long lifetime support often not found in these devices, making them ideal for industrial designs. Renesas’ ultra-fast QDR™ (Quad Data Rate) SRAMs are ideal for next-generation high bandwidth communication systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. Our EEPROM realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology, a CMOS process and low voltage circuitry technology.
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