MACOM’s Silicon and GaAs varactor multiplier diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for multiplier circuits and are available in die form, plastic and ceramic packaging. These diodes boast a flip chip series for higher frequency millimeter wave applications; plastic packaged series for microwave frequency surface mount applications; ceramic packaged series for high power waveguide and coaxial applications.
MACOM’s GaAs and Silicon varactor tuning diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for high Q filter and VCO electronic tuning circuits and are available in die form, flip chip, plastic and ceramic packaging. These GaAs diodes boast a constant gamma series for higher frequency and high Q applications and silicon abrupt and hyper abrupt series in plastic packaging are suitable for high volume surface mount applications.
MACOM’s PIN limiter diodes provide excellent broadband performance from 1 MHz to 20 GHz and higher for receiver protector circuits. Our PIN limiter diodes are available in die form, plastic and ceramic packaging. Our ceramic packaged diode series is ideal for waveguide, coaxial, and surface mount applications, while our die diode series is well suited for chip and wire high frequency microwave applications.
MACOM’s PIN switch and attenuator diodes provide broadband performance from 1 MHz to 70 GHz. Available in die form, SURMOUNTTM, flip chip, plastic and ceramic packaging. These products are excellent choices for your switch, limiter, phase shifter and attenuator circuit applications. These diodes are available in Silicon, GaAs and AlGaAs technologies.
MACOM’s Silicon and GaAs varactor multiplier diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for multiplier circuits and are available in die form, plastic and ceramic packaging. These diodes boast a flip chip series for higher frequency millimeter wave applications; plastic packaged series for microwave frequency surface mount applications; ceramic packaged series for high power waveguide and coaxial applications.
Schottky diodes are majority carrier diodes formed by plating a layer of metal on a layer of doped semiconductor, which forms a rectifying junction. The type of metal and the type of dopant in the semiconductor determines the diode’s barrier height, which is a measure of the amount of energy required to force the diode into forward conduction. MACOM produces Si Schottky diodes as well as GaAs Schottky diodes for use as signal detectors or in frequency mixers.
The intrinsic cutoff frequencies of these Schottky junction devices exceed 1 THz, making them well-suited for use in mixers and detectors operating in the frequency bands from 60 GHz into the hundreds of GHz bands.
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