Dopant
In semiconductor manufacturing, electrical performance starts with atomic-level control. Dopant technologies make that possible by introducing carefully measured doping constituents that help devices conduct, switch and perform reliably. For precise control of fluxes for Molecular Beam Epitaxy (MBE) dopant constituents, or for gases that do not require thermal cracking, Veeco’s Dopant products are ideal.
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Dopant Source
Attain precise and stable control of relatively low fluxes for dopant constituents in molecular beam epitaxy (MBE) through this compact dopant source. Its small thermal mass gives it excellent responsiveness, reproducibility, and stabilization for advanced doping profiles, plus consistent flux uniformity across an entire platen. Efficient cell heating minimizes thermal load.
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5cc Dual Dopant Source
Attain precise and stable control of relatively low fluxes for dopant constituents in molecular beam epitaxy (MBE) through this compact dopant source. Its small thermal mass gives it excellent responsiveness, reproducibility, and stabilization for advanced doping profiles, plus consistent flux uniformity across an entire platen. Efficient cell heating minimizes thermal load.
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product
Low Temperature Gas Source
Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.
