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Bipolar Transistors
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Renesas transistors offer a package lineup including ultra-small packages, suitable for a variety of applications such as large current applications, amplifiers, and support customers' systems.
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Product
Photocouplers/Optocouplers Transistor Output
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The PS2xxx series, a range of transistor output type general-purpose photocouplers (optocouplers), feature a high isolation voltage, high temperature operation and compliance with various international safety standards.
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Product
RF Power Transistors
Silicon Bipolar
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Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Product
Insulated Gate Bipolar Transistors
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The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
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Product
RF Power Transistors
Silicon MOSFET
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Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Product
STPOWER RF LDMOS Transistors
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ST offers a broad portfolio of RF LDMOS (lateral double-diffused metal oxide semiconductor) transistors operating from a supply voltage of 7 to 50 V. They target applications in the 1 MHz to 4 GHz frequency range and feature high peak power up (>1 kW) and high ruggedness capability.
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Product
MOS Transistor Selector
UI9610
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MOS with superior performance has now been widely used in electronic ballasts, energy-saving lamps were. But power MOS test screening, matching problem. It is difficult due to a lack of corresponding inspection means that many enterprises do not have to engage seriously in quality control as well as the effect of product consistence and reliability. The equipment in a unique program designed to solve the power MOS test problem containing micro-processing, intelligent a few significant simple application.
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Product
Simulation Models for Passive Components, Transistors, Diodes, etc.
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An indispensable collection of the industry''s most advanced simulation models for passive components, transistors, diodes and more. These reliable, measurement-based models maximize the RF/MW electronic design automation (EDA) process, reduce design cycle times, and lower product development cost. With a few EASY steps, the Modelithics Model Libraries are ready to use in EDA tools.
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Product
Transistor Testing
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Radiant is introducing an I2C digital-to-analog converter product that can be attached to the Precision Premier II and is controlled from Vision. The addition of this extra voltage source makes it possible for the Premier II to measure the performance of thin-ferroelectric-film gate transistors (TFFTs and MFSFETs). This document explains the theory for such testing and gives examples of such tests using Radiant's SFRAM transistors as examples.
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Product
Bipolar Small Signal Transistors
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A comprehensive lineup of small packages are available, as well as dual products that take up little space and other composite products.
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Product
Transistor Arrays
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Renesas' portfolio of transister arrays include NPN, PNP, NPN-PNP combination transistor arrays based on our complementary UHF-1 SOI process. This portfolio also includes ultra high frequency transistor arrays for VHF/UHF amplifiers, VHF/UHF mixers, IF converters, synchronous detectors. Dual long-tailed pair transistor arrays and Gilbert Cell UHF transistor arrays are also available for wireless communication systems, radio and satellite communications and high performance instrumentation.
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Product
Wide Bandgap Transistors
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The key for the next essential step towards a more energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors (WBG) which allow for increased power efficiency, smaller size, lighter weight, lower system cost or all of these together. STMicroelectronics offers the broadest product and technology portfolio of silicon carbide (MOSFETs) and gallium-nitride-based (e-mode HEMT) devices, covering bare dies, discretes and modules belonging to the STPOWER family.
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Product
MOS Transistor Selector
UI9611
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Measure parameters: Open voltage UGS (th), internal resistance RDS, Transconductance gm, Withstand voltage V (BR) DS• Test range: UGS (th) 0.1-9.9V; RDS 0.001-9.999Ω gm; 0.10-10.00s; V (BR) DS 50-650V• Test current range: 0.1A-5A adjustable, comply with different working situation• Automatic selecting, out of limit alarming, advance the work efficiency• The technique of testing RDS under the big-current, is advanced technique
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Product
Matched Transistors
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Analog Devices offers dual and quad transistors with excellent matching characteristics. Offset voltages, temperature drift, and hFE matching are individually tested to data sheet specifications. Device performance is guaranteed over industrial and military temperature ranges. Each of these devices is an excellent choice as an input stage for an amplifier or in log/antilog circuits. ADI’s matched transistors offer low noise and high gain, with characteristics approaching an ideal transistor.
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Product
Bipolar Power Transistors
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A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.
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Product
STPOWER RF DMOS Transistors
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ST offers a broad portfolio of RF DMOS (double-diffused metal oxide semiconductor) transistors operating from a supply voltage ranging from 50 up to 100 V with high reliability (1 million power cycles). Targeting applications in the 1 to 250 MHz frequency range, our RF DMOS transistors feature high peak power (up to 1.2 kW) and high ruggedness capability (infinite:1 VSWR).
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Product
RF Power Transistors
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A specialized semiconductor device designed to amplify or switch high-frequency (Radio Frequency) signals, enabling powerful wireless communication in everything from cell phones and Wi-Fi to radar and satellite systems by handling significant power levels at speeds from kilohertz to gigahertz.
