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External Cavity Diode Lasers
ECDLs
High-performance ECDLs and injection-locked optical amplifier.
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Laser Diode Reliability Burn-In / Life-Test System
58602
Chroma 58602 is a high density, precision multi source measurement Unit (SMU) module with temperature control and exchangeable interface developed for burn-in, reliability and life test of optoelectronic components including laser diodes, VCSELs, VCSEL Arrays, silicon Photonics, photo-diodes and other similar components.
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SP4T RF Pin Diode Switches To 16 GHz
The 4-way series of absorptive and reflective switches operate from 100 MHz to 16 GHz. They are rated at 200 mW maximum input power and have a switching time of 100 ns. SP4T switches that operate up to 8 GHz have a maximum VSWR of 1.6:1 and minimum isolation of 60 dB. All absorptive and reflective switches manufactured by Pulsar Microwave require both positive and negative 5-volt supplies. Additionally, the TTL control logic operates from 0 to +5 VDC. Voltage connection is made with feed thru terminals. Ground connection is made through the chassis and turret terminals.
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Silicon Carbide Diodes
In addition to ensuring compliance with today's most stringent energy efficiency regulations (Energy Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon diodes. Silicon-carbide diodes belong to our STPOWER family.
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Schottky Mixer And Detector Diodes
Majority carrier diodes formed by plating a layer of metal on a layer of doped semiconductor, which forms a rectifying junction.
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Bipolar/FET/Diode Dual Head Production Test System
36XX
Two test stations on the 3600E and 3601E systems. Performs DC, AC, and pulsed tests. Excels at evaluating difficult to measure parameters on zeners, current limiters, varactor tuning diodes and darlingtons. 24 bin opto-isolated handler/prober interface. Parallel first-in first out computer to tester interface for maximum throughput. Parallel testing with a 3602E or 3603E allows shared test execution for extremely high throughput applications when interfaced to high speed handlers with multiple test sites.
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SPDT PIN Diode Switches
Fairview offers a comprehensive selection of 23 different models of SPDT PIN diode switches that cover frequencies ranging from 10 MHz to 67 GHz. The high isolation levels up to 80 dB ensure that unwanted signals will not leak into the desired signal path. Other critical performance features include low insertion loss as low as 1.1 dB and fast switching speed performance as low as 50 nanoseconds. Both absorptive and reflective designs are available and every model utilizes integrated TTL compatible high speed driver logic circuitry. These SPDT switches are constructed using MIL-Grade rugged coaxial packages and several models support field replaceable connectors. All models are EAR99.
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Schottky Barrier Diodes
ST's small-signal and power Schottky diode range features diodes from 15 V up to 200 V (with the STPS60SM200C) made of robust avalanche capable technologies. Schottky barrier diodess belong to our STPOWER family.
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Current Pulsers and Laser Diode Drivers (Pulsed Current)
These instruments generate current pulses whose amplitude is largely independent of the load voltage. This makes them ideal for pulsing device whose voltage may vary with time (for instance, the voltage drop of laser diodes may vary with temperature, or explosive squibs which change impedance during ignition). This voltage independence is a trade-off with speed. If faster rise times are required, consider using pulsed voltage instruments instead.
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12 Pulse Diode Bridge Rectifiers Inside Fiberglass Plenums, P/N 5872C4-2
- 12 Pulse Diode Bridge Rectifier, P/N 5872C4-2- Each diode is rated for 60 Amps, 1800 Volts peak- Dimensions: 50″L x 40″W x 20″H approximately- Four 10″ fans are used for coolingFour 10″ fans will force cool from the bottom of the Plenum. 12 diode assemblies (each diode consists of nine diodes in series are integrated together inside the Plenum). The output is rated for 3000 VDC, 80 Amps.
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SP1T RF Pin Diode Switches To 18 GHz
Pulsar Microwave manufactures pin diode RF switches that are controlled by TTL logic. This configuration is known as single pole, single throw and is often abbreviated SPST or SP1T. They have been engineered to function in 50-ohm systems, and are designed to operate from 40 MHz to 18 GHz. They have a switching time of 100 nanoseconds and input power rating of 200 mW (23 dBm). Performance of 1.6:1 or better VSWR and minimum isolation of 60 dB is typical of most models.All switches of this type require both +5VDC and -5VDC to operate. Typical current consumption is +/- 30 mA. TTL control logic of 0 to +5VDC is required. Units comes standard with SMA connectors.
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Planar-Doped Barrier Diode Detector, 0.01 to 18 GHz
8474B
The Keysight 8474B is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474B is also very rugged with high resistance to ESD damage. The Keysight 8474B detectors are available with 0.01 to 18 GHz and a type-N connector. This detector offers options for optimal square-law loads (Option 102) and for positive polarity output (Option 103). Because the unit-to-unit frequency response tracking of these devices is typically better than plus or minus 0.3 dB, no matched response option is offered.
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SP6T RF Pin Diode Switches To 12 GHz
The SP6T series of 6-way absorptive and reflective switches manufactured by Pulsar Microwave cover applications from 300 MHz to 12 GHz. They have an isolation of 60 decibels and most models specify 1.6:1 or better return loss throughout frequency band. These 6-way switches require a +/- 5VDC supply to operate. Switching control uses individual 0-5V TTL control logic. Voltage and logic control interfaces into a system using a 9-pin D-SUB connector installed.
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USHIO Blue Violet Laser Diodes (375nm - 405nm)
The Optoelectronics Company Ltd
The USHIO HL40071MG is a single transverse mode 405nm laser diode which offers 300mW optical output power in a 5.6mm package with typical optical and electrical characteristics, (Tc=25 degrees C, cw), of 50mA threshold current, operating current of 280mA, operating voltage 6.0V, 6 degrees beam divergence parallel to the junction, 15 degrees beam divergence perpendicular to the junction, laser diode reverse voltage of 2V and operating temperature of 0 to +70 degrees C.
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Low-Barrier Schottky Diode Detector, 0.01 to 18 GHz
33330B
The Keysight 33330B low-barrier schottky diode detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Laser Diode Light Current Voltage (LIV) Test Instruments
The Yelo LIV test instrument allows LIV measurements to be taken from laser devices loaded into a Yelo module. This module can also be used with the Yelo Y1000L Low Power Burn-in system. The LIV test instrument has been designed for easy operation. Once powered on, and with laser supply enabled, the touch screen can be used to initiate, monitor and review measurements of laser devices.
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SCR Diode Testers
SCRs and Diodes are used in the power sections of various power systems. A SCR Diode Tester is an important piece of equipment to determine if a SCR or a diode is defective in a power circuit. It is difficult and time-consuming to troubleshoot SCRs and Diodes with a digital meter.
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Tunable Diode Laser
Tunable diode laser absorption spectroscopy (TDLAS) is a fast, accurate, non-contact gas analysis technique that responds quickly to changing analyte concentrations. It is a proven technology free of interferences from other sample stream components.
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USHIO Infrared Laser Diodes (705nm - 852nm)
The Optoelectronics Company Ltd
USHIO OPTO's new 705nm, 40mW laser diodes, HL7001MG and HL7002MG are the first ever 705nm semiconductor lasers and are suitable for biomedical light sources. For more information, see HL7001MG/7002MG overview.
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Laser Diode Characterization Systems
Artifex Engineering GmbH & Co. KG
The LIV100 and LIV120 employ digitally programmable analogue end stages for flexible and accurate current control. A wide range of current end stages are available with maximum currents of 250mA for low power and telecom lasers or up to 1200A for high power laser bars. Custom units are available with even more current!
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Step Recovery Diodes
Macom Technology Solutions Holdings Inc.
MACOM’s Silicon and GaAs varactor multiplier diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for multiplier circuits and are available in die form, plastic and ceramic packaging. These diodes boast a flip chip series for higher frequency millimeter wave applications; plastic packaged series for microwave frequency surface mount applications; ceramic packaged series for high power waveguide and coaxial applications.
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Infrared Laser Diode Modules: 830nm-852nm, Elliptical Beam
The Optoelectronics Company Ltd
Custom lasing wavelengths, from 405 nm to 852 nm, output power options and laser engraving are available to your specifications. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete cost-effective laser solutions.
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Laser Diode Source Product Family
LDS-7200
5 nanometers tuning range• 10 picometer setpoint accuracy• 0.1 picometer resolution• 20mW output power• 0.005 dB power stability• Built-in coherence control• Integrated function generator• USB remote interface• Application program with source code
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Rotating Diode Assembly, P/N 6118CA
CEHCO is a specialist in the repair of Rotating Diode Assemblies.
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LIMITER P-I-N DIODES FROM 0.7 TO 9.55 GHz
They prevent failure of of input amplifying stage of low-noise receivers with radio pulse power up to 5000 Watt. They can also be applied as seperate units without power supply and acting as controlled switches. This component is very valuable for radar applications because the high power transmitter and extremely sensitive receiver work with a single antenna.
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Diode Temperature Monitor
SIM922
Stanford Research Systems, Inc.
The SIM922 Diode Temperature Monitor and the SIM923 Platinum RTD Monitor are designed to measure four sensors simultaneously. Based on the modular SIM platform, they provide high-performance and multiple-channel capability in a small footprint.
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Solid State PIN Diode Transfer Switch, 100 MHz to 8 GHz
P9400A
The Keysight P9400A solid state PIN diode transfer switch offers outstanding performance in terms of port-to-port isolation, switching speed and low insertion loss over a broad operating frequency range of 100 MHz to 8 GHz. The P9400A is particularly well-suited for ultra-fast RF and microwave switching applications in instrumentation, communications, radar, switch matrices and various other test systems where high isolation, speed and lifetime of a switch are critical.
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Planar-Doped Barrier Diode Detector, 10 MHz to 12 GHz
8471E
The Keysight 8471E is a low-cost, planar-doped barrier detector offering excellent performance from 10 MHz to 12 GHz. It has an SMA male input connector and an SMC male output connector.
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Tunable Diode Laser Absorption Spectroscopy
5100 TDLAS
The feature-rich 5100 TDLAS offers high-sensitivity, analyte-specific, fast-response measurements for critical industrial applications. It features a single absorption cell and integrated sample system in a compact, cost-effective package.
