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MICROWAVE SWITCHING DIODES FROM 1 to 40 GHz
Insight Product Company offers Microwave Switching Diodes with switching time up to 3 nsec and operating in frequency range from 1 to 40 GHz. The p+ -n - n+ silicon spackage-less switching diodes are designed to be used in microwave switching devices, phase changers, modulators, microwave attenuators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
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Planar-Doped Barrier Diode Detector, 0.01 to 50 GHz
8474E
The Keysight 8474E is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474E is also very rugged with high resistance to ESD damage. The Keysight 8474E detector is available with a 2.4-mm (0.01 to 50 GHz) connector. This detector offers the options for optimal square-law loads (Option 102) and for positive polarity output (Option 103). Because the unit-to-unit frequency response tracking of this device is typically better than plus or minus 0.3 dB, no matched response option is offered.
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2.5G DFB Laser Diode Chips
Guilin GLsun Science and Tech Group Co., LTD
2.5G DFB Laser Diode Chips by GLSN
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Low-Barrier Schottky Diode Detector, 10 MHz to 18 GHz
8473B
The Keysight 8473B Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking.
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Planar-Doped Barrier Diode Detector, 100 kHz to 2 GHz
8471D
The Keysight 8471D is a low-cost, planar-doped barrier detector offering excellent performance to 2 GHz. A negative polarity output is standard, and a positive polarity is available as Option 103. A load option (Option 102) extends the square-law region to at least -10 dBm. The Keysight 8471D has a BNC (m) input connector and a frequency range of 100 kHz to 2 GHz, making it ideal for use in RF and low microwave applications.
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Diode Lasers
Spot Creator
Advanced Photonic Sciences LLC
Spot Creator is an innovative accessory developed for enhancing the performance of blue laser diode based engraving and cutting machines. Spot Creator solves a major problem with using asymmetric blue laser diodes: the production of engraving features that are different in the X-Y directions, resulting in unequal or blurred lines. Using Spot Creator, line widths are equal in the X-Y directions, with a minimum spot of 50 μm. The intensity on the engraved part is thus maximized.
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Modules - Modules, Diode
Diode modules from Vishay feature a range of technologies including FRED Pt®, HEXFRED®, and high performance Schottky, with reverse voltage ratings up to 2500 V and forward current ratings up to 600 A.
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Laser Diode
Is an electrically pumped semiconductor laser in which the active laser medium is formed by a p-n junction of a semiconductor diode similar to that found in a light-emitting diode.
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High-Speed Switching Diodes 33 To 140 GHz
Insight Product Company offers high-speed switching diodes with switching time up to 2 nsec and operating frequency range up to 140 GHz. Silicon p+-p-n-n+ high-speed switching diodes are designed to be used in mm-wave switching devices, phase changers, modulators, attenuators for the millimeter wavelength range. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).
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Schottky Mixer and Detector Diodes
Macom Technology Solutions Holdings Inc.
Schottky diodes are majority carrier diodes formed by plating a layer of metal on a layer of doped semiconductor, which forms a rectifying junction. The type of metal and the type of dopant in the semiconductor determines the diode’s barrier height, which is a measure of the amount of energy required to force the diode into forward conduction. MACOM produces Si Schottky diodes as well as GaAs Schottky diodes for use as signal detectors or in frequency mixers.
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Laser Diode
A laser diode, also known as an injection laser or diode laser, is a semiconductor device that produces coherent radiation (in which the waves are all at the same frequency and phase) in the visible or infrared (IR) spectrum when current passes through it.
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SiC Schottky Barrier Diode
We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency.We are also employing a new material (silicon carbide: SiC) for products with even higher efficiency.
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Point Contact Diodes
SemiGen’s 1N Series of Point Contact Mixer Diodes are designed for applications through KA band. Each device in this series is specially designed for low noise gure, impedance and VSWR. Our devices are drop in replacements for all military and commercial requirements. These diodes employ epitaxial silicon grown in a speci c reactor for optimized performance. They are suitable for use in stripline applications.
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PULSE IMPATT DIODES FROM 30 TO 140 GHz
Insight Product Company offers IMPATT diodes with pulse power up to 20 Watt and operational frequency range up to 140 GHz. Silicon p+-p-n-n+ IMPATT diodes are designed to be used in the millimeter wave oscillators and amplifiers. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).
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Laser Diode Drivers
Renesas offers a portfolio of laser diode driver (LDD) ICs for DVD/CD/Blue-ray optical drive and laser projection applications.
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Solid State PIN Diode Transfer Switch, 100 MHz to 18 GHz
P9400C
The Keysight P9400C solid state PIN diode transfer switch offers outstanding performance in terms of port-to-port isolation, switching speed and low insertion loss over a broad operating frequency range of 100 MHz to 18 GHz. The P9400C is particularly well suited for ultra-fast RF and microwave switching applications in instrumentation, communications, radar, switch matrices and various other test systems where high isolation, speed and lifetime of a switch is critical.
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PIN Diodes
PIN photodiodes convert light to current – without a bias voltage having to be applied. Silicon is commonly used as an inexpensive detector material in the Vis range. For higher demands, InGaAs is used; it covers the widest spectral range from the Vis to the NIR. We offer silicon carbide as a “solar-blind” detector specifically for the UV range.
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Osram High Power Blue Violet Laser Diodes (450-488nm)
The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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Three-Path Diode
NRPxxS/SN/SN-V
The R&S®NRPxxS/SN power sensors use three separate diode paths, each operated in the optimum detector range. As a result, the average power can be determined with high accuracy independent of the modulation type. Measurement results are hardly affected by interfering signals or harmonics.
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Diode Pumped Actively Q-switched Lasers
NL120 Series
NL120 series electro-optically Q-switched nanosecond Nd:YAG lasers provide up to 10 J per pulse with excellent stability. The innovative, diode‑pumped, self‑seeded master oscillator design results in Single Longitudinal Mode (SLM) output without the use of expensive narrow linewidth seed diodes and cavity‑locking electronics.
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Laser Diode Drivers
Arroyo Instruments offers a broad range of laser drivers to meet your exact test needs. From 100 milliamps to 100 Amps, all of Arroyo Instruments' LaserSource benchtop laser drivers include unique features not found on competing products such as optically isolated photodiode and modulation inputs, programmable PD bias, and both RS232 and USB computer interfaces. The LaserSource also has laser diode protection circuits such as interlock, ESD protection, and hardware limits for current and voltage.
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Bypass Diode Tester
BDT
Our bypass diode thermal tester is designed to assess the adequacy of the thermal design and long-term reliability of PV modules bypass diodes, which are used to limit the detrimental effects of module hot spot susceptibility.
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Laser Diode Characterization Testing
The Yelo Laser Diode Characterization system performs automated characterization of a laser device. The system will allow the operator to load a single packaged Laser device into a TEC controlled fixture mount. Each test station (LIV, Spectrum, Far Field/Beam Divergence) will then automatically align with the Laser Device in a sequential order and perform the automated tests required of each station.
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Laser Diode Collimators, 520nm - 785nm, Elliptical Beam
The Optoelectronics Company Ltd
Custom lasing wavelengths and power options are available. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete, cost-effective laser solutions.
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Gunn Diodes
The Gunn diode is the best known and most readily available device in the family of transferred electron devices (TED). They are employed as DC to microwave converters using the negative resistance characteristics of bulk Gallium Arsenide (GaAs) and only require a standard, low impedance, constant voltage power supply, thereby eliminating complex circuitry. Teledyne Lincoln Microwave’s DC1200 series of GaAs Gunn diodes is designed for operation at fixed frequency (determined by the oscillator cavity) within a specified band under CW or pulsed conditions.
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Laser Diode Modules
Fiber-coupled laser diodes are finding more and more industrial applications, for example in printing technology, comparable graphic areas, material processing or sensor technology.
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Diodes
Development target specification*PD=5W class*Capability for load dump surge：ISO7637-2, JASO A-1*Reliability standard：AEC-Q101*Package size：[W×L×H] 12.0×9.6×4.3(mm)
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25G DFB Laser Diode Chips
Guilin GLsun Science and Tech Group Co., LTD
25G DFB Laser Diode Chips by GLSN
