System-on Chip
A complete computer "System on a Chip".
-
Product
16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip
AQD-SD4U16GN32-SE
Memory Module
16GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, Unbuffered.
-
Product
8G DDR5-4800 288Pin 1GX16 1.1V Unbuffered Samsung Chip
AQD-D5V8GN48-SC
-
Samsung Original Chip, Increased Banks and Burst Length. DDR5 4.8GT/s, Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
8GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip
AQD-D4U8GE32-SE
-
8GB, Speed 3200MHz, 30u" Gold Plating Thickness, Anti-sulfurization resistance, ECC.
-
Product
16GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip
AQD-SD5V16GN56-HB
-
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
25G DFB Laser Diode Chips
-
Guilin GLsun Science and Tech Group Co., LTD
25G DFB Laser Diode Chips by GLSN
-
Product
5μm Transparent Quartz Interdigitated Electrode Chip
TIF1
-
5μm transparent quartz IDE chip designed for MEMS, biosensing, gas sensing, electrochemical, and photoelectric applications.
-
Product
5μm Transparent Quartz Interdigitated Electrode Chip
TIM1
-
5μm transparent quartz IDE chip designed for MEMS, gas sensing, bioelectrochemical, and photoelectric applications.
-
Product
16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
Memory Module
Registered DIMM, 30u" Gold Plating Thickness, Anti-sulfurization resistance. 1.2V power consumption, Samsung original chip, wide temperatures from -40° to 85°C.
-
Product
32GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip
AQD-SD5V32GN56-HB
-
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
