Zener Diode
current flow from cathode to anode reverses when zener voltage reached.
See Also: Diode, Laser Diode, Diode Test, Photodiode
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Diodes And Rectifiers
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Vishay is a world leader in diodes and rectifiers, having a broad technology base and a solid position in automotive, industrial, computing, and consumer markets.
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Product
Bypass Diode Thermal Test System
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King Design Industrial Co., Ltd.
* Power: the heating board control panel uses 220V single-phase power.* Power consumption: 1.0KVA, 1000W(Max)* Volt: 220VAC* Current: 4.5A* Heating board: one controller per board* Power rate: room temperature raise to 75°C± 5°C within one minute.* Heating board dimension: 500mm x 1,000mm* 6-sheet electrical heating boards test: used to test the 2,200mm x 2,600mm module. It can be customer-designed.* The length of board power cable and thermal sensor cable shall exceed 3,000mm.* To get uniform heating effect, the electrical board is sandwiched by 2mm aluminum sheets at both sides of board.
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Diode Temperature Monitor
SIM922
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Stanford Research Systems, Inc.
The SIM922 Diode Temperature Monitor and the SIM923 Platinum RTD Monitor are designed to measure four sensors simultaneously. Based on the modular SIM platform, they provide high-performance and multiple-channel capability in a small footprint.
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Product
Modules - Modules, Diode
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Diode modules from Vishay feature a range of technologies including FRED Pt®, HEXFRED®, and high performance Schottky, with reverse voltage ratings up to 2500 V and forward current ratings up to 600 A.
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Industrial Tech Diode Laser
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Our products include the most reliable high-power diode lasers available in the industry today. Our unmatched ability to scale manufacturing to consumer volumes ensures that we meet the technical and logistical needs of all our customers. With extensive technical and manufacturing expertise, we are a leading global source for VCSELs—industry-standard housing dimensions, very high reliability, and excellent performance over extended operational temperatures make them ideal for consumer markets.
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PULSE IMPATT DIODES FROM 30 TO 140 GHz
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Insight Product Company offers IMPATT diodes with pulse power up to 20 Watt and operational frequency range up to 140 GHz. Silicon p+-p-n-n+ IMPATT diodes are designed to be used in the millimeter wave oscillators and amplifiers. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).
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USHIO Infrared Laser Diodes (705nm - 852nm)
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The Optoelectronics Company Ltd
USHIO OPTO's new 705nm, 40mW laser diodes, HL7001MG and HL7002MG are the first ever 705nm semiconductor lasers and are suitable for biomedical light sources. For more information, see HL7001MG/7002MG overview.
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Beam Lead PIN Diodes
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The SemiGen SBL 2000 series Beam Lead PIN Diodes feature fast switching speeds at both low capacitance and resistance. Beam Lead PIN Diodes have high levels of mechanical strength and stability during assembly. These diodes are suitable for microstrip or stripline circuits as well as circuits requiring high isolation from a series of mounted diodes such as multi-throw switches, phase shifters, attenuators and modulators.
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Handheld Digital Multimeter, AC/DC Voltage, Continuity, Diode, 3.5, 2000, Manual, 250 V
72-13440
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*Palm size digital multimeter with 2000 count clear LCD display*CAT II 250V environment safety rating*Manual functional select and manual range selection*2m drop test, precision protection*Auto backlight off*Knobs shift smoothly, in-line with ergonomics*Equipped with comfortable protective cover and test probe holder*Powered by AAA 1.5V x 2 batteries*Non-contact voltage (NCV) detection*12-month limited warranty *view Terms & Conditions for details
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LIMITER P-I-N DIODES FROM 0.7 TO 9.55 GHz
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They prevent failure of of input amplifying stage of low-noise receivers with radio pulse power up to 5000 Watt. They can also be applied as seperate units without power supply and acting as controlled switches. This component is very valuable for radar applications because the high power transmitter and extremely sensitive receiver work with a single antenna.
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SP6T RF Pin Diode Switches To 12 GHz
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The SP6T series of 6-way absorptive and reflective switches manufactured by Pulsar Microwave cover applications from 300 MHz to 12 GHz. They have an isolation of 60 decibels and most models specify 1.6:1 or better return loss throughout frequency band. These 6-way switches require a +/- 5VDC supply to operate. Switching control uses individual 0-5V TTL control logic. Voltage and logic control interfaces into a system using a 9-pin D-SUB connector installed.
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Schottky Diodes
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SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches.
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SiC Diodes
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ST’s silicon carbide diodes range from 600 to 1200 V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved VF. Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market. ST’s SiC Schottky diodes show a significant power-loss reduction and are commonly used in hard-switching applications such as high-end-server and telecom power supplies, while also intended for solar inverters, motor drives and uninterruptible power supplies (UPS). ST’s automotive-grade 650 and 1200 V SiC diodes – AEC-Q101-qualified and PPAP capable – feature the lowest forward voltage drop (VF) on the market, for optimal efficiency in electric vehicle (EV) applications.
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Osram Direct Emission Green Laser Diodes (510 - 530nm)
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The Optoelectronics Company Ltd
The PLT3 520D laser diode can deliver 140mW pulses at 520nm with 8% efficiency, driven at 300mA at 50% duty cycle – OSRAM's previous limit was 80mW with the PL 520B. This new diode has been developed to work in MEMS-based scanners.
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SP1T RF Pin Diode Switches To 18 GHz
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Pulsar Microwave manufactures pin diode RF switches that are controlled by TTL logic. This configuration is known as single pole, single throw and is often abbreviated SPST or SP1T. They have been engineered to function in 50-ohm systems, and are designed to operate from 40 MHz to 18 GHz. They have a switching time of 100 nanoseconds and input power rating of 200 mW (23 dBm). Performance of 1.6:1 or better VSWR and minimum isolation of 60 dB is typical of most models.All switches of this type require both +5VDC and -5VDC to operate. Typical current consumption is +/- 30 mA. TTL control logic of 0 to +5VDC is required. Units comes standard with SMA connectors.
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Laser Diode Characterization System
58620
System
The Chroma 58620 Laser Diode Characterization Station is a state-of-the-art full turnkey system specially designed for laser diode testing. Features range from macro inspection of the facet or aperture active area to a full suite of electro-optical parametic tests.
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MINIATURE SILICON DIODE TEMPERATURE SENSOR, 2 To 600 Degress Kelvin
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Insight Product Company offers SILICON DIODE TEMPERATURE SENSORS CAN BE USED FOR TEMPERATURE Â MEASUREMENTS IN DIFFERENT FIELDS OF CRYOGENIC ENGINEERING AND EXPERIMENTAL PHYSICS. THEY ARE MINIATURE AND OPERATE IN THE TEMPERATURE RANGE FROM 2 TO 600 K.
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SMD Tester Capacitance Resistance Diode Tweezers Test Pen Multimeter SMD Meter
VA503
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Shanghai Yi Hua V&A Instrument Co., Ltd. CO.,LTD
SMD tester Capacitance Resistance Diode Tweezers Test Pen Multimeter SMD Meter. SMD Components Identifier
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USHIO Blue Violet Laser Diodes (375nm - 405nm)
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The Optoelectronics Company Ltd
The USHIO HL40071MG is a single transverse mode 405nm laser diode which offers 300mW optical output power in a 5.6mm package with typical optical and electrical characteristics, (Tc=25 degrees C, cw), of 50mA threshold current, operating current of 280mA, operating voltage 6.0V, 6 degrees beam divergence parallel to the junction, 15 degrees beam divergence perpendicular to the junction, laser diode reverse voltage of 2V and operating temperature of 0 to +70 degrees C.
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Laser Diode Driver
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Fibotec offers special laser diode drivers, especially versions that accommodate laser diodes via integrated terminal bases. Two standard products for different applications accommodate laser diodes in butterfly packages with up to 2 A forward current. The "Pump Laser Pinout" is standard. The configuration for "Signal Laser" is available on request.
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SPDT PIN Diode Switches
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Fairview offers a comprehensive selection of 23 different models of SPDT PIN diode switches that cover frequencies ranging from 10 MHz to 67 GHz. The high isolation levels up to 80 dB ensure that unwanted signals will not leak into the desired signal path. Other critical performance features include low insertion loss as low as 1.1 dB and fast switching speed performance as low as 50 nanoseconds. Both absorptive and reflective designs are available and every model utilizes integrated TTL compatible high speed driver logic circuitry. These SPDT switches are constructed using MIL-Grade rugged coaxial packages and several models support field replaceable connectors. All models are EAR99.
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Bridge Rectifier Diodes
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ST’s portfolio of bridge rectifier diodes is intended for primary bridges. In input primary bridge applications, ST's 1200V bridge diodes achieve very low conduction losses thanks to very low forward voltage characteristics. They can operate at up to +175 °C junction temperature, as a result of reduced leakage currents. Bridge rectifier diodes are belonging to the STPOWER family.
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Laser Diode Driver
LDD100
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Artifex Engineering GmbH & Co. KG
The LDD100 employs a digitally programmable analogue end stage for flexible and accurate current control. Currents of up to 600A with pulse durations of 50ns to 3s are generated with rise and fall times of 70ns (F-version) or 600ns (XL-version) – essentially without overshoot. Due to the flexibility in setup and control, the LDD100 is practical for many laboratory applications. For automated measurements, the unit may be directly controlled via the USB interface. Alternatively, all parameters may be input via the graphical software or via the integrated keypad and OLED display.
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PIN Diodes
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PIN photodiodes convert light to current – without a bias voltage having to be applied. Silicon is commonly used as an inexpensive detector material in the Vis range. For higher demands, InGaAs is used; it covers the widest spectral range from the Vis to the NIR. We offer silicon carbide as a “solar-blind” detector specifically for the UV range.
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Solid State PIN Diode Transfer Switch, 100 MHz to 18 GHz
P9400C
Dual Transfer Switch
The Keysight P9400C solid state PIN diode transfer switch offers outstanding performance in terms of port-to-port isolation, switching speed and low insertion loss over a broad operating frequency range of 100 MHz to 18 GHz. The P9400C is particularly well suited for ultra-fast RF and microwave switching applications in instrumentation, communications, radar, switch matrices and various other test systems where high isolation, speed and lifetime of a switch is critical.
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MICROWAVE VARIABLE-CAPACITANCE DIODES FROM 1 to 40 GHz
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Insight Product Company offers Microwave Variable-Capacitance Diodes with capacity coverage ratio over 10 times and operating in frequency range from 1 to 40 GHz. The p+ -n1 - n2 -n+ silicon variable-capacitance diodes are designed to electrically tune frequences and phases of microwave oscillators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
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E & W-Band PIN Diode Waveguide Switches
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Fairview Microwave’s single-pole single-throw (SPST) and double-pole double-throw (DPDT) PIN diode waveguide switches feature fully integrated WR-10 and WR-12 waveguide ports and cover popular E-band (60 to 90 GHz) and W-band (75 to 110 GHz) frequencies. Switch circuits integrate low loss Fin-line assemblies with high performance GaAs beam-lead diodes that results in 4 dB insertion loss, greater than 25 dB of Isolation and fast switching speed < 300 nsec.
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SP4T RF Pin Diode Switches To 16 GHz
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The 4-way series of absorptive and reflective switches operate from 100 MHz to 16 GHz. They are rated at 200 mW maximum input power and have a switching time of 100 ns. SP4T switches that operate up to 8 GHz have a maximum VSWR of 1.6:1 and minimum isolation of 60 dB. All absorptive and reflective switches manufactured by Pulsar Microwave require both positive and negative 5-volt supplies. Additionally, the TTL control logic operates from 0 to +5 VDC. Voltage connection is made with feed thru terminals. Ground connection is made through the chassis and turret terminals.
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Laser Diode Drivers For Automotive
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Automotive Head-Up Displays (HUDs) are benefiting from big innovations in MEMS projection systems and are central to ADAS and safety. The latest laser scanned-MEMS projection systems can provide higher resolution images and at a lower cost. Renesas' highly integrated laser diode driver enables automotive head-up displays (HUDs) with high resolution, high color-depth and high frame-rate projections.
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SP8T RF Pin Diode Switches To 12 GHz
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Pulsar Microwave manufactures 8-way absorptive and reflective RF switches in single-pole 8-throw configuration. They fulfill broadband and narrowband requirements from 40 MHz to 12 GHz and handle 200 milliwatts input power. The SP8T switches have an isolation of 60 dB and switching time of 100 ns. Most models specify 1.6:1 or better VSWR at all ports. The SP8T switches operate on a power supply of +/- 5VDC and switching control is 0-5 TTL logic. The unit comes standard with SMA female connectors. Options for control are line drivers and decoders.
