NIR Photodetectors

NIR Photodetectors

InGaAs PiN sensors and sensor arrays

Telcordia qualified InGaAs P-I-N photodetector device dies for the telecommunication, laser power monitoring, test systems
Active area sizes from 25 μm to 1 mm.
Device die characteristics with low dark current, low capacitance and high quantum efficiency
Wafer capability: 2", 3" and 4" on InP substrates
High volume and low cost production

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