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DIELECTRIC POROSITY MEASUREMENT

DIELECTRIC POROSITY MEASUREMENT

For decreasing the capacitance of interconnection isolators in integrated circuits:Decrease of RC time delay (increase of operating frequency)Decrease of power consumptionFor further decreasing the dielectric constant, the material has to be porousThis implies additional reliability questions, eg.:Cracking / adsorption loss (need to stay on the substrate for long)Mechanical strength (need to survive chemical-mechanical polishing, CMP)Typical Young modulus of SiO2 is 70 GPa (for dense SiOCH: <15 GPa, for porous SiOCH: <10 GPa)Moisture absorption (need to be hydrophobic, in order to remain a good insulator)Dielectric constant depend on porosity, eg. for porous SiOCH*:ULK (ultra low-k): k 2.5 , with porosity 20% and pore size 3-4 nmELK (extreme low-k): k 2.3, with porosity 30% and pore size 5-6 nmCharacterization of porous dielectric layers is necessary to ensure reliable layer fabrication

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