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INGAAS PHOTODIODES

INGAAS PHOTODIODES

OSI Optoelectronics latest product line includes a very low reflectance photodiode. Designed for telecommunication applications, the InGaAs/InP photodiode has a typical optical reflectance of less than .6% from 1520nm to 1620nm. This ultra low reflectance over the wide wavelength range was achieved by depositing a proprietary multi-layered anti-reflection coating directly onto the surface of the InGaAs/InP photodiode.

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