Quadrupole SIMS Dopant Depth Profiling And Thin Layer Analysis In Semiconductors

Quadrupole SIMS Dopant Depth Profiling And Thin Layer Analysis In Semiconductors

The CAMECA SIMS 4550 offers extended capabilities for ultra shallow depth profiling, trace element and composition measurements of thin layers in Si, high-k, SiGe and other compound materials such as III-V for optical devices.

Get Help