Showing results: 1 - 4 of 4 items found.
-
Focus Microwaves
All Focus tuners use extremely efficient calibration and tuning algorithms and control electronics based on LAN control (iTuner). This is a merger our proven tuner technology with state of the art control electronics to create the latest tuner generation. The on-board micro-processor and tuning firmware form a self-contained and fully calibrated test instrument. The micro-processor inside the tuner accepts ASCII format communication, via an industry standard TCP/IP interface, controls up to nine stepper motors (tuner axes) and executes interpolation and tuning functions for single probe (CCMT) tuners (one probe per frequency range). For tuners with more than one independent probe (MPT) covering the same frequency range to allow for harmonic tuning, external computing power is required, because of the exponentially growing number of combinations of tuner states (slug positions).
-
Focus Microwaves
Minimum Noise Figure (Fmin): This is the smallest Noise Figure that the device can reach at a given frequency and bias, if it is optimally matched at the source.Equivalent Noise Resistance (Rn): This is a number with the dimension Ohm that indicates how fast the Noise Figure increases when we mismatch the input (source).
-
Focus Microwaves
Beyond traditional Noise and Harmonic Load/Source Pull, FDCS also supports Tuner and Fixture (TRL) calibrations, Time Domain Load Line acquisition, Pulsed IV and Load Pull and Active feedback Power Injection operations (for Γ ≥ 1).The measured data are processed graphically into 2D and 3D plots and are converted into popular simulator formats (ADS, AWR etc.).The FDCS user unterface includes many many improvements and optimizations to make load pull and noise measurement easier.The software has ActiveX control for controlling MPT tuners in any ActiveX compatible platform.
-
AURIGA 4850 -
Focus Microwaves
Auriga’s 4th generation pulsed IV/RF characterization system delivers unparalleled performance, capturing measurements with incredible speed and accuracy. Pulsed IV (current-voltage) measurements have emerged as the preferred method of capturing current-voltage characteristics of active devices such as field effect (FETs) and bipolar junction (BJTs) transistors. With the growing popularity of higher-power devices, like GaN HEMTs, LDMOS, SiC, and graphene, current and voltage requirements are constantly being pushed higher and higher.
