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Product
Differential Probes (8-30 GHz)
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The DH series of 8 to 30 GHz active differential probes provides high input dynamic range, large offset capability, low loading and excellent signal fidelity with a range of connection options.
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Product
Near Field Probes 30 MHz up to 3 GHz
RF2 set
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The RF2 near field probe set consists of 4 passive near field probes for measurements in the development phase of the magnetic field in the range from 30 MHz to 3 GHz on electronic assemblies. The probe heads of the RF2 set allow the step by step localization of interference sources of the RF magnetic field on assemblies. From greater distances the electromagnetic interference can be detected by RF-R 400-1 and RF-R 50-1 probes. The RF-B 3-2 and RF-U 5-2 probes with their higher resolution can more precisely detect the interference sources. Field orientation and field distribution on an electronic assembly can be detected through a trained special use of the near field probe. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
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Product
Near Field Probes 30 MHz - 6 GHz
XF Family
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The XF family consists of 4 passive magnetic field probes and 3 passive E field probes designed for measuring magnetic and E-fields in ranges from 30 MHz to 6 GHz during the development phase. Due to their integrated impendance matching the probes are less sensitive in the lower frequency range than the RF type probes.
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Product
Near Field Probes 30 MHz up to 3 GHz
RF1 set
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The RF1 near field probe set consists of 4 passive near field probes for making measurements in the development phase of E-field and magnetic field in the ranges of 30 MHz to 3 GHz on electronic assemblies. The probe heads of the RF1 set allow for measurements close to the electronic assemblies, e.g. on single IC pins, conducting paths, components and their connectors in order to localize interference sources. Field orientation and field distribution on an electronic assembly can be detected through a trained special use of the near field probe. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
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Product
Near Field Probes 30 MHz up to 6 GHz
XF1 set
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The XF1 set of near field probes consists of 4 passive near field probes and one passive E field probe for making measurements in the development phase of the magnetic and electric fields in ranges from 30 MHz to 6 GHz. Due to their integrated impendance matching, the probes are less sensitive in the lower frequency range than the RF type probes. The probe heads of the XF1 set allow for the step by step identification of interference sources of the magnetic field on an electronic assembly. At first, for example the XF-R 400-1 detects the fields which the assembly emits in total. Next, using higher resolution probes the interference sources can be more precisely detected. The E field probe is used for the detection of electric interfering fields near the assemblies. With trained use of the near field probes, field orientation and field distribution can be detected. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They have an internal terminating resistance.
