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Bandwidth > 512Kbps or signaling having numerous frequencies.


Showing results: 421 - 435 of 558 items found.

  • Accelerometers

    353B15 - PCB Piezotronics, Inc.

    Sensitivity: (10 %);10 mV/g 1.02 mV/(m/s) Measurement Range:500 g pk 4905 m/s pk Frequency Range:(5 %)1 to 10000 Hz1 to 10000 Hz Frequency Range:(10 %)0.7 to 18000 Hz 0.7 to 18000 Hz Frequency Range: (3 dB)0.35 to 30000 Hz0.35 to 30000 Hz Resonant Frequency:70 kHz,70 kHz Broadband Resolution (1)0.005 g rms0.05 m/s rmsNon-Linearity:1 %1 % Transverse Sensitivity:5 %5 %

  • Up Converters

    Macom Technology Solutions Holdings Inc.

    MACOM's upconverters are widely used in point-to-point radio, broadband communications, and RADAR applications. Operating up to a frequency of 86 GHz, our upconverters feature an integrated image reject (balanced) mixer, LO buffer, and RF buffer. Some products also include LO multiplication and variable gain, all within a single chip. Available in die, or SMT lead-free QFN and LGA packages, our upconverters boast excellent performance with adjustable bias, high linearity and image rejection with low LO leakage

  • Tasman DVL

    Teledyne Marine RD Instruments

    Teledyne RDI’s new Tasman DVL represents the next generation of DVL technology, taking your navigation to the next level. Teledyne RDI’s long-standing Workhorse Navigator was the first DVL to enter the market, and remains the gold-standard for precision subsea navigation around the globe. However, the new Tasman DVL, with its wide array of advanced features, reduced size, and increased range, is ready to replace this industry icon. Other new features include enhanced broadband signal processing and an innovative, cost-effective field-replaceable phased array transducer design.

  • Microwave / RF Systnesizers

    Kratos Microwave Electronics Division

    Kratos General Microwave (KGM) has developed a broad line of General Purpose RF and Microwave Synthesizers to be used in various applications. KGM has developed a line of high performance, broadband Fast Indirect Synthesizers (FIS) to provide a cost-effective solution to the requirements of new systems. Its high speed (as fast as 1 sec) provides an economical alternative to direct synthesizers for many applications. Because of its low phase noise, it is an excellent alternate to the much slower and generally less reliable YIG-based rf synthesizer.

  • Oscillators

    Ducommun Inc

    Ducommun’s oscillator family includes FET based dielectric resonator oscillators (OFD), phase locked oscillators (OPL), Gunn diode based low cost Gunn oscillators (OGL), bias tuned Gunn oscillators (OGB), mechanically tuned oscillators (OGM), varactor tuned Gunn oscillators (OGV), injection locked Gunn oscillators (OGI) and Gunn oscillator bias regulators and modulators (OGR and OMR). In the mechanically tuned Gunn oscillator family, the ultra broadband series (OGF) delivers up to full waveguide tuning bandwidth.

  • Switches-Limiter

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • Switches-SPST

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • Switches-SP4T

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • Switches-SP6T

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • Switches-SP5T

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • Switches-DPDT

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • Switches-SP8T

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • Switches-SPDT

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • Switches-SP3T

    Macom Technology Solutions Holdings Inc.

    At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.

  • RF And Microwave Modules

    Sample Technology

    Unlike specialized RF and microwave module product suppliers, Shengbo Technology has accumulated rich experience in designing and developing broadband microwave test products. As a sophisticated RF and microwave test system, a large number of high-performance RF and microwave modules are required for system integration. To this end, we have conducted in-depth research.

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